US5U1 Datasheet and Replacement
Type Designator: US5U1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 14 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TUMT5
US5U1 substitution
US5U1 Datasheet (PDF)
us5u1.pdf
US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT5Schottky barrier diode 2.01.3 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol :
Datasheet: UPA572CT , UPA573CT , UPA602CT , UPA603CT , UPA621TT , UPA622TT , UPA650TT , UPA651TT , IRFP460 , US5U2 , US5U29TR , US5U3 , US5U30 , US5U35 , US5U38 , US6J11 , US6K1 .
History: APT5017SVFRG | APT6029BFLL
Keywords - US5U1 MOSFET datasheet
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History: APT5017SVFRG | APT6029BFLL
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