All MOSFET. US5U1 Datasheet

 

US5U1 MOSFET. Datasheet pdf. Equivalent

Type Designator: US5U1

Marking Code: U01

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.7 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 1.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 1.6 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 14 pF

Maximum Drain-Source On-State Resistance (Rds): 0.24 Ohm

Package: TUMT5

US5U1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

US5U1 Datasheet (PDF)

1.1. us5u1.pdf Size:62K _update-mosfet

US5U1
US5U1

US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT5 Schottky barrier diode 2.0 1.3 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol :

1.2. us5u1.pdf Size:74K _rohm

US5U1
US5U1

US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT5 Schottky barrier diode 2.0 1.3 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol : U0

 

Datasheet: GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
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