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US5U1 Specs and Replacement

Type Designator: US5U1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 14 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: TUMT5

US5U1 substitution

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US5U1 datasheet

 ..1. Size:62K  rohm
 us5u1.pdf pdf_icon

US5U1

US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 Structure Dimensions (Unit mm) Silicon N-channel MOSFET / TUMT5 Schottky barrier diode 2.0 1.3 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol ... See More ⇒

Detailed specifications: UPA572CT , UPA573CT , UPA602CT , UPA603CT , UPA621TT , UPA622TT , UPA650TT , UPA651TT , IRFP460 , US5U2 , US5U29TR , US5U3 , US5U30 , US5U35 , US5U38 , US6J11 , US6K1 .

History: QM2413V

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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