US5U1 MOSFET. Datasheet pdf. Equivalent
Type Designator: US5U1
Marking Code: U01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.7 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V
Maximum Drain Current |Id|: 1.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 1.6 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 14 pF
Maximum Drain-Source On-State Resistance (Rds): 0.24 Ohm
Package: TUMT5
US5U1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
US5U1 Datasheet (PDF)
1.1. us5u1.pdf 
Size:62K _update-mosfet
US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT5 Schottky barrier diode 2.0 1.3 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol :
1.2. us5u1.pdf Size:74K _rohm
US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT5 Schottky barrier diode 2.0 1.3 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol : U0
Datasheet: GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .
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