All MOSFET. US5U1 Datasheet

 

US5U1 Datasheet and Replacement


   Type Designator: US5U1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TUMT5
 

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US5U1 Datasheet (PDF)

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US5U1

US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT5Schottky barrier diode 2.01.3 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol :

Datasheet: UPA572CT , UPA573CT , UPA602CT , UPA603CT , UPA621TT , UPA622TT , UPA650TT , UPA651TT , IRF640 , US5U2 , US5U29TR , US5U3 , US5U30 , US5U35 , US5U38 , US6J11 , US6K1 .

History: FDY102PZ | NCEP6090

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