US5U2 Specs and Replacement
Type Designator: US5U2
Marking Code: U02
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
Qg ⓘ - Total Gate Charge: 1.4 nC
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TUMT5
US5U2 substitution
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US5U2 datasheet
us5u2.pdf
US5U2 Transistors 4V Drive Nch+SBD MOSFET US5U2 Structure Dimensions (Unit mm) Silicon N-channel MOSFET / TUMT5 Schottky barrier diode 2.0 1.3 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) 4V drive. 4) Built-in Low VF schottky barrier diode. Abbreviated symbol U02 Applications Swi... See More ⇒
us5u29tr.pdf
US5U29 Transistor Small switching ( 20V, 1.5A) US5U29 Features External dimensions (Unit mm) 1) The US5U29 conbines Pch MOSFET with a (4) (3) (2) Schottky barrier diode in a single TSMT5 package. (5) (1) 2) Pch MOSFET have a low on-state resistance with a fast switching. 0.2 1.7 0.2 2.1 3) Pch MOSFET is reacted a low voltage drive(2.5V) 4) The Independently con... See More ⇒
Detailed specifications: UPA573CT, UPA602CT, UPA603CT, UPA621TT, UPA622TT, UPA650TT, UPA651TT, US5U1, IRFZ44, US5U29TR, US5U3, US5U30, US5U35, US5U38, US6J11, US6K1, US6K2
Keywords - US5U2 MOSFET specs
US5U2 cross reference
US5U2 equivalent finder
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US5U2 substitution
US5U2 replacement
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