US5U3 MOSFET Datasheet: N-Ch, 30V, 1.5A. Full specification with pinout and replacement list

US5U3 Specs and Replacement

   Type Designator: US5U3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TUMT5

US5U3 substitution

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US5U3 datasheet

..1. Size:65K rohm
us5u3.pdf pdf_icon

US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 Structure Dimensions (Unit mm) Silicon N-channel MOSFET / TUMT5 Schottky barrier diode 2.0 1.3 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol ... See More ⇒

0.1. Size:76K rohm
us5u30.pdf pdf_icon

US5U30 Transistor 2.5V Drive Pch+SBD MOSFET US5U30 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT5 Schottky Barrier DIODE 2.0 1.3 Features 1) The US5U30 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive(2.5V) 4) Built-in schottky barrier diode has low forward v... See More ⇒

0.2. Size:101K rohm
us5u35.pdf pdf_icon

US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT5 Schottky Barrier DIODE 2.0 Features 1.3 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching. 3) Built-in schottky barrier diode has low forward voltage. Abbreviated symbol U35 Applications Swi... See More ⇒

0.3. Size:106K rohm
us5u38.pdf pdf_icon

US5U38 Transistor 2.5V Drive Pch+SBD MOSFET US5U38 Dimensions (Unit mm) Structure Silicon P-channel MOSFET TUMT5 Schottky Barrier DIODE 2.0 1.3 Features 1) The US5U38 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward volt... See More ⇒

Detailed specifications: UPA603CT , UPA621TT , UPA622TT , UPA650TT , UPA651TT , US5U1 , US5U2 , US5U29TR , IRF1404 , US5U30 , US5U35 , US5U38 , US6J11 , US6K1 , US6K2 , US6K4 , US6M1 .