All MOSFET. US5U3 Datasheet

 

US5U3 MOSFET. Datasheet pdf. Equivalent

Type Designator: US5U3

Marking Code: U03

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.7 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 1.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 1.6 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 14 pF

Maximum Drain-Source On-State Resistance (Rds): 0.24 Ohm

Package: TUMT5

US5U3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

US5U3 Datasheet (PDF)

0.1. us5u3.pdf Size:65K _rohm

US5U3
US5U3

US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT5 Schottky barrier diode 2.0 1.3 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol

0.2. us5u38.pdf Size:106K _rohm

US5U3
US5U3

US5U38 Transistor 2.5V Drive Pch+SBD MOSFET US5U38 Dimensions (Unit : mm) Structure Silicon P-channel MOSFET TUMT5 Schottky Barrier DIODE 2.0 1.3 Features 1) The US5U38 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward volt

 0.3. us5u35.pdf Size:101K _rohm

US5U3
US5U3

US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT5 Schottky Barrier DIODE 2.0 Features 1.3 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching. 3) Built-in schottky barrier diode has low forward voltage. Abbreviated symbol : U35 Applications Swi

0.4. us5u30.pdf Size:76K _rohm

US5U3
US5U3

US5U30 Transistor 2.5V Drive Pch+SBD MOSFET US5U30 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT5 Schottky Barrier DIODE 2.0 1.3 Features 1) The US5U30 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive(2.5V) 4) Built-in schottky barrier diode has low forward v

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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