All MOSFET. US5U35 Datasheet

 

US5U35 Datasheet and Replacement


   Type Designator: US5U35
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TUMT5
 

 US5U35 substitution

   - MOSFET ⓘ Cross-Reference Search

 

US5U35 Datasheet (PDF)

 ..1. Size:101K  rohm
 us5u35.pdf pdf_icon

US5U35

US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT5Schottky Barrier DIODE 2.0 Features 1.31) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching. 3) Built-in schottky barrier diode has low forward voltage. Abbreviated symbol : U35 Applications Swi

 9.1. Size:76K  rohm
 us5u30.pdf pdf_icon

US5U35

US5U30 Transistor 2.5V Drive Pch+SBD MOSFET US5U30 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT5Schottky Barrier DIODE 2.01.3 Features 1) The US5U30 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive(2.5V) 4) Built-in schottky barrier diode has low forward v

 9.2. Size:106K  rohm
 us5u38.pdf pdf_icon

US5U35

US5U38 Transistor 2.5V Drive Pch+SBD MOSFET US5U38 Dimensions (Unit : mm) Structure Silicon P-channel MOSFET TUMT5Schottky Barrier DIODE 2.01.3 Features 1) The US5U38 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward volt

 9.3. Size:65K  rohm
 us5u3.pdf pdf_icon

US5U35

US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT5Schottky barrier diode 2.01.3 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol

SHOW MORE

Datasheet: UPA622TT , UPA650TT , UPA651TT , US5U1 , US5U2 , US5U29TR , US5U3 , US5U30 , IRF640N , US5U38 , US6J11 , US6K1 , US6K2 , US6K4 , US6M1 , US6M11 , US6M2 .

Keywords - US5U35 MOSFET datasheet

 US5U35 cross reference
 US5U35 equivalent finder
 US5U35 lookup
 US5U35 substitution
 US5U35 replacement

 

 
Back to Top

 


 
.