All MOSFET. US5U35 Datasheet

 

US5U35 MOSFET. Datasheet pdf. Equivalent

Type Designator: US5U35

Marking Code: U35

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.7 W

Maximum Drain-Source Voltage |Vds|: 45 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 0.7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 1.7 nC

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 14 pF

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: TUMT5

US5U35 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

US5U35 Datasheet (PDF)

1.1. us5u35.pdf Size:101K _update-mosfet

US5U35
US5U35

US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT5 Schottky Barrier DIODE 2.0 Features 1.3 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching. 3) Built-in schottky barrier diode has low forward voltage. Abbreviated symbol : U35 Applications Swi

1.2. us5u35.pdf Size:129K _rohm

US5U35
US5U35

US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT5 Schottky Barrier DIODE 2.0 Features 1.3 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching. 3) Built-in schottky barrier diode has low forward voltage. Abbreviated symbol : U35 Applications Switch

 5.1. us5u3.pdf Size:65K _update-mosfet

US5U35
US5U35

US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT5 Schottky barrier diode 2.0 1.3 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol

5.2. us5u38.pdf Size:106K _update-mosfet

US5U35
US5U35

US5U38 Transistor 2.5V Drive Pch+SBD MOSFET US5U38 Dimensions (Unit : mm) Structure Silicon P-channel MOSFET TUMT5 Schottky Barrier DIODE 2.0 1.3 Features 1) The US5U38 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward volt

 5.3. us5u30.pdf Size:76K _update-mosfet

US5U35
US5U35

US5U30 Transistor 2.5V Drive Pch+SBD MOSFET US5U30 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT5 Schottky Barrier DIODE 2.0 1.3 Features 1) The US5U30 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive(2.5V) 4) Built-in schottky barrier diode has low forward v

5.4. us5u3.pdf Size:75K _rohm

US5U35
US5U35

US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT5 Schottky barrier diode 2.0 1.3 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol : U

 5.5. us5u38.pdf Size:134K _rohm

US5U35
US5U35

US5U38 Transistor 2.5V Drive Pch+SBD MOSFET US5U38 Dimensions (Unit : mm) Structure Silicon P-channel MOSFET TUMT5 Schottky Barrier DIODE 2.0 1.3 Features 1) The US5U38 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward voltage

5.6. us5u30.pdf Size:88K _rohm

US5U35
US5U35

US5U30 Transistor 2.5V Drive Pch+SBD MOSFET US5U30 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT5 Schottky Barrier DIODE 2.0 1.3 Features 1) The US5U30 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive(2.5V) 4) Built-in schottky barrier diode has low forward volt

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