US6M1 MOSFET. Datasheet pdf. Equivalent

Type Designator: US6M1

Marking Code: M01

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 0.7 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 1.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 1.4 nC

Rise Time (tr): 6 nS

Drain-Source Capacitance (Cd): 15 pF

Maximum Drain-Source On-State Resistance (Rds): 0.24 Ohm

Package: TUMT6

US6M1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

US6M1 Datasheet (PDF)

1.1. us6m1.pdf Size:93K _update-mosfet

US6M1 Transistors 4V+2.5V Drive Nch+Nch MOSFET US6M1 Structure Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET TUMT6 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6). Abbreviated symbol : M01 Application Power switching, DC / DC converter. Packaging specifications Equivalent circuit Package Tapi

1.2. us6m11.pdf Size:198K _update-mosfet

1.5V Drive Nch+Pch MOSFET US6M11 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT6 Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M11 Applications Inner circuit Switching (6) (5) (4) ∗1 Packa

1.3. us6m1.pdf Size:107K _rohm