ECH8304 Specs and Replacement

Type Designator: ECH8304

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 9 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 234 nS

Cossⓘ - Output Capacitance: 970 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: ECH8

ECH8304 substitution

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ECH8304 datasheet

 ..1. Size:36K  sanyo
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ECH8304

Ordering number ENN8255 ECH8304 P-Channel Silicon MOSFET General-Purpose Switching Device ECH8304 Applications Features Best suited for load switching. Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS 9 V Drain Current (DC) ID ... See More ⇒

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ECH8304

Ordering number ENN8247 ECH8302 P-Channel Silicon MOSFET General-Purpose Switching Device ECH8302 Applications Features Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --7 A Drain Current (Pulse) IDP PW ... See More ⇒

 8.2. Size:36K  sanyo
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ECH8304

Ordering number ENN8145 ECH8305 P-Channel Silicon MOSFET General-Purpose Switching Device ECH8305 Applications Features Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --4 A Drain Current (Pulse) IDP PW 1... See More ⇒

 8.3. Size:36K  sanyo
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ECH8304

Ordering number ENA0302 ECH8306 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8306 Applications Features Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --100 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --2 ... See More ⇒

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Detailed specifications: APM3023NF, SI4834BDY, SI4856DY, SSM60T03H, SSM60T03J, EC4406C, EC4407KF, ECH8302, IRFP260, ECH8305, ECH8306, ECH8402, ECH8411, ECH8690, ECH8693R, ECH8695R, ECH8697R

Keywords - ECH8304 MOSFET specs

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