ECH8305 MOSFET. Datasheet pdf. Equivalent
Type Designator: ECH8305
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 34 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 122 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: ECH8
ECH8305 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ECH8305 Datasheet (PDF)
ech8305.pdf
Ordering number : ENN8145 ECH8305P-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8305ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --4 ADrain Current (Pulse) IDP PW1
ech8302.pdf
Ordering number : ENN8247ECH8302P-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8302ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --7 ADrain Current (Pulse) IDP PW
ech8304.pdf
Ordering number : ENN8255ECH8304P-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8304ApplicationsFeatures Best suited for load switching. Low ON-resistance. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 9 VDrain Current (DC) ID
ech8306.pdf
Ordering number : ENA0302 ECH8306SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8306ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --100 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --2
ech8309.pdf
ECH8309Ordering number : ENA1418ASANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8309ApplicationsFeatures 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 10 VDrain Current (
ech8308.pdf
Ordering number : ENA1182ECH8308SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8308ApplicationsFeatures Best suited for load switching. Low ON-resistance. 1.8V drive. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS -
ech8309.pdf
Ordering number : ENA1418BECH8309P-Channel Power MOSFEThttp://onsemi.com 12V, 9.5A, 16m , Single ECH8Features 1.8V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID --9
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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