ECH8411 MOSFET. Datasheet pdf. Equivalent
Type Designator: ECH8411
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.5 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 310 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: ECH8
ECH8411 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ECH8411 Datasheet (PDF)
ech8411.pdf
Ordering number : ENA0073 ECH8411N-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8411ApplicationsFeatures Ultrahigh-speed switching. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 12 VDrain Current (DC) ID 9 ADrain Current (Pulse) IDP
ech8419.pdf
ECH8419Ordering number : ENA1886SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8419ApplicationsFeatures ON-resistance RDS(on)1=13m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Sourc
ech8410.pdf
ECH8410Ordering number : ENA1331SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8410ApplicationsFeatures Low ON-resistance. 4V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 20
ech8420.pdf
ECH8420Ordering number : EN8993SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETECH8420 General-Purpose Switching DeviceApplicationsFeatures ON-resistance RDS(on)1=5.2m (typ.) 1.8V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source
ech8402.pdf
Ordering number : ENN8148 ECH8402N-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8402ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 10 ADrain Current (Pulse) IDP PW10
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100