EFC4619R
MOSFET. Datasheet pdf. Equivalent
Type Designator: EFC4619R
Marking Code: FU
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.5
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 21.7
nC
trⓘ - Rise Time: 440
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023
Ohm
Package: EFCP1616
EFC4619R
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
EFC4619R
Datasheet (PDF)
..1. Size:279K onsemi
efc4619r.pdf
Ordering number : ENA2179A EFC4619R Power MOSFET http://onsemi.com 24V, 6A, 23m N-Channel Dual EFCP Features 2.5V drive Protection diode in Common-drain type Halogen free compliance 2KV ESD HBM Applications Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ra
8.1. Size:391K 1
efc4618r-p.pdf
EFC4618R-POrdering number : ENA1123SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4618R-PApplicationsFeatures 2.5V drive Best suited for LiB charging and discharging switch Common-drain typeSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 24 V
8.2. Size:266K sanyo
efc4612r.pdf
EFC4612ROrdering number : ENA1477ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4612RApplicationsFeatures 2.5V drive. Built-in gate protection resistor. Best suited for LiB charging and discharging switch. Common-drain type.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings
8.3. Size:333K sanyo
efc4615.pdf
EFC4615ROrdering number : ENA1629SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4615RApplicationsFeatures 2.5V drive Best suited for LiB charging and discharging switch Common-drain typeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 24 VGa
8.4. Size:391K sanyo
efc4618r.pdf
EFC4618ROrdering number : ENA1881SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4618RApplicationsFeatures 2.5V drive Best suited for LiB charging and discharging switch Common-drain typeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 24 VGa
8.5. Size:332K onsemi
efc4615r.pdf
EFC4615ROrdering number : ENA1629SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4615RApplicationsFeatures 2.5V drive Best suited for LiB charging and discharging switch Common-drain typeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 24 VGa
Datasheet: WPB4002
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