EFC4619R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: EFC4619R
Маркировка: FU
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 24 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 21.7 nC
trⓘ - Время нарастания: 440 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm
Тип корпуса: EFCP1616
EFC4619R Datasheet (PDF)
efc4619r.pdf
Ordering number : ENA2179A EFC4619R Power MOSFET http://onsemi.com 24V, 6A, 23m N-Channel Dual EFCP Features 2.5V drive Protection diode in Common-drain type Halogen free compliance 2KV ESD HBM Applications Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ra
efc4618r-p.pdf
EFC4618R-POrdering number : ENA1123SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4618R-PApplicationsFeatures 2.5V drive Best suited for LiB charging and discharging switch Common-drain typeSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 24 V
efc4612r.pdf
EFC4612ROrdering number : ENA1477ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4612RApplicationsFeatures 2.5V drive. Built-in gate protection resistor. Best suited for LiB charging and discharging switch. Common-drain type.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings
efc4615.pdf
EFC4615ROrdering number : ENA1629SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4615RApplicationsFeatures 2.5V drive Best suited for LiB charging and discharging switch Common-drain typeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 24 VGa
efc4618r.pdf
EFC4618ROrdering number : ENA1881SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4618RApplicationsFeatures 2.5V drive Best suited for LiB charging and discharging switch Common-drain typeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 24 VGa
efc4615r.pdf
EFC4615ROrdering number : ENA1629SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4615RApplicationsFeatures 2.5V drive Best suited for LiB charging and discharging switch Common-drain typeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 24 VGa
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918