All MOSFET. EKH06100 Datasheet

 

EKH06100 Datasheet and Replacement


   Type Designator: EKH06100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO-220
 

 EKH06100 substitution

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EKH06100 Datasheet (PDF)

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EKH06100

60V High Current Low RDS(ON) N ch Trench Power MOSFET EKH06100 / FKH0660 / SKH06100 Features Package TO220 TO220F TO263 VDS -------------------------------------------------------- 60 V EKH06100 FKH0660 SKH06100 ID ------------------------ 100 A (EKH06100, SKH06100) (Back side) RDS(ON) -------------- 3.8 m typ.(VGS = 10 V, ID = 50 A) D Built-in Gate pr

Datasheet: EFC6602R , EFC6604R , EFC6605R , EFC6611R , EFC6611R-TF , EFC6612R , EFC6612R-TF , EKG1020 , P0903BDG , EKI04027 , EKI04036 , EKI04047 , EKI06051 , EKI06075 , EKI06108 , EKI07076 , EKI07117 .

History: AU4N65S | 2N7002-7 | SRC65R032FB | CS6N70F | STN3414 | YJG90G10A | BUK9K18-40E

Keywords - EKH06100 MOSFET datasheet

 EKH06100 cross reference
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