EKH06100 Specs and Replacement

Type Designator: EKH06100

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO-220

EKH06100 substitution

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EKH06100 datasheet

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 ekh06100.pdf pdf_icon

EKH06100

60V High Current Low RDS(ON) N ch Trench Power MOSFET EKH06100 / FKH0660 / SKH06100 Features Package TO220 TO220F TO263 VDS -------------------------------------------------------- 60 V EKH06100 FKH0660 SKH06100 ID ------------------------ 100 A (EKH06100, SKH06100) (Back side) RDS(ON) -------------- 3.8 m typ.(VGS = 10 V, ID = 50 A) D Built-in Gate pr... See More ⇒

Detailed specifications: EFC6602R, EFC6604R, EFC6605R, EFC6611R, EFC6611R-TF, EFC6612R, EFC6612R-TF, EKG1020, IRF1407, EKI04027, EKI04036, EKI04047, EKI06051, EKI06075, EKI06108, EKI07076, EKI07117

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