All MOSFET. EKH06100 Datasheet

 

EKH06100 MOSFET. Datasheet pdf. Equivalent


   Type Designator: EKH06100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 165 nC
   trⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO-220

 EKH06100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

EKH06100 Datasheet (PDF)

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 ekh06100.pdf

EKH06100 EKH06100

60V High Current Low RDS(ON) N ch Trench Power MOSFET EKH06100 / FKH0660 / SKH06100 Features Package TO220 TO220F TO263 VDS -------------------------------------------------------- 60 V EKH06100 FKH0660 SKH06100 ID ------------------------ 100 A (EKH06100, SKH06100) (Back side) RDS(ON) -------------- 3.8 m typ.(VGS = 10 V, ID = 50 A) D Built-in Gate pr

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