All MOSFET. EKI06108 Datasheet

 

EKI06108 MOSFET. Datasheet pdf. Equivalent


   Type Designator: EKI06108
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 57 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 36.2 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm
   Package: TO-220

 EKI06108 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

EKI06108 Datasheet (PDF)

 ..1. Size:246K  sanken-ele
 eki06108.pdf

EKI06108 EKI06108

60 V, 57 A, 7.0 m Low RDS(ON) N ch Trench Power MOSFET EKI06108 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 57 A D RDS(ON) ---------- 9.2 m max. (VGS = 10 V, ID = 28.5 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A) Low Total Gate

 ..2. Size:254K  inchange semiconductor
 eki06108.pdf

EKI06108 EKI06108

isc N-Channel MOSFET Transistor EKI06108FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 9.1. Size:246K  sanken-ele
 eki06075.pdf

EKI06108 EKI06108

60 V, 78 A, 5.1 m Low RDS(ON) N ch Trench Power MOSFET EKI06075 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 78 A D RDS(ON) ---------- 6.6 m max. (VGS = 10 V, ID = 39.0 A) Qg ------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39.0 A) Low Total Gate

 9.2. Size:246K  sanken-ele
 eki06051.pdf

EKI06108 EKI06108

60 V, 85 A, 3.9 m Low RDS(ON) N ch Trench Power MOSFET EKI06051 Features Package V(BR)DSS --------------------------------- 60 V (ID = 100 A) TO-220 (4) ID ---------------------------------------------------------- 85 A D RDS(ON) ---------- 4.9 m max. (VGS = 10 V, ID = 55.0 A) Qg ------44.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 55.0 A) Low Total Gate

 9.3. Size:251K  inchange semiconductor
 eki06075.pdf

EKI06108 EKI06108

isc N-Channel MOSFET Transistor EKI06075FEATURESDrain Current I =78A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.4. Size:251K  inchange semiconductor
 eki06051.pdf

EKI06108 EKI06108

isc N-Channel MOSFET Transistor EKI06051FEATURESDrain Current I =85A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: ECH8662

 

 
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