ELM14354AA Specs and Replacement
Type Designator: ELM14354AA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ -
Output Capacitance: 898 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: SOP-8
- MOSFET ⓘ Cross-Reference Search
ELM14354AA datasheet
..1. Size:927K elm
elm14354aa.pdf 
Single N-channel MOSFET ELM14354AA-N General description Features ELM14354AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=23A (Vgs=10V) resistance. Rds(on) ... See More ⇒
9.1. Size:414K elm
elm14702aa-n.pdf
Single N-channel MOSFET with schottky diode ELM14702AA-N General description Features ELM14702AA-N uses advanced trench Vds=30V Schottky diode technology to provide excellent Rds(on) Id=11A Vds(V)=30V and low gate charge. Rds(on) ... See More ⇒
9.2. Size:414K elm
elm14409aa.pdf
Single P-channel MOSFET ELM14409AA-N General description Features ELM14409AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-10V) resistance. Rds(on) ... See More ⇒
9.3. Size:458K elm
elm14430aa.pdf
Single N-channel MOSFET ELM14430AA-N General description Features ELM14430AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=18A (Vgs=10V) resistance. Rds(on) ... See More ⇒
9.4. Size:394K elm
elm14427aa.pdf
Single P-channel MOSFET ELM14427AA-N General description Features ELM14427AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12.5A (Vgs=-20V) resistance. Internal ESD protection is included. Rds(on) ... See More ⇒
9.5. Size:410K elm
elm14411aa.pdf
Single P-channel MOSFET ELM14411AA-N General description Features ELM14411AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A (Vgs=-10V) resistance. Rds(on) ... See More ⇒
9.6. Size:389K elm
elm14822aa.pdf
Dual N-channel MOSFET ELM14822AA-N General description Features ELM14822AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on) and low gate charge. Id=8.5A (Vgs=10V) Rds(on) ... See More ⇒
9.7. Size:394K elm
elm14419aa.pdf
Single P-channel MOSFET ELM14419AA-N General description Features ELM14419AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-9.7A (Vgs=-10V) resistance. Rds(on) ... See More ⇒
9.8. Size:401K elm
elm14468aa.pdf
Single N-channel MOSFET ELM14468AA-N General description Features ELM14468AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=11.6A (Vgs=10V) resistance. Rds(on) ... See More ⇒
9.9. Size:389K elm
elm14425aa.pdf
Single P-channel MOSFET ELM14425AA-N General description Features ELM14425AA-N uses advanced trench technology to Vds=-38V provide excellent Rds(on), low gate charge and low gate Id=-14A (Vgs=-20V) resistance. Internal ESD protection is included. Rds(on) ... See More ⇒
9.10. Size:428K elm
elm14408aa.pdf
Single N-channel MOSFET ELM14408AA-N General description Features ELM14408AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=12A (Vgs=10V) resistance. Rds(on) ... See More ⇒
9.11. Size:399K elm
elm14466aa.pdf
Single N-channel MOSFET ELM14466AA-N General description Features ELM14466AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=9.4A (Vgs=10V) resistance. Rds(on) ... See More ⇒
9.12. Size:395K elm
elm14806aa.pdf
Dual N-channel MOSFET ELM14806AA-N General description Features ELM14806AA-N uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=9.4A (Vgs=10V) operation with gate voltages as low as 1.8V and internal Rds(on) ... See More ⇒
9.13. Size:401K elm
elm14828aa.pdf
Dual N-channel MOSFET ELM14828AA-N General description Features ELM14828AA-N uses advanced trench technology to Vds=60V provide excellent Rds(on) and low gate charge. Id=4.5A (Vgs=10V) Rds(on) ... See More ⇒
9.14. Size:569K elm
elm14604aa.pdf
Complementary MOSFET ELM14604AA-N General Description Features ELM14604AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=6.9A(Vgs=10V) Id=-5A(Vgs=-10V) Rds(on) ... See More ⇒
9.15. Size:624K elm
elm14614aa.pdf
Complementary MOSFET ELM14614AA-N General Description Features ELM14614AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=40V Vds=-40V and low gate charge. Id=6A(Vgs=10V) Id=-5A(Vgs=-10V) Rds(on) ... See More ⇒
9.16. Size:389K elm
elm14801aa.pdf
Dual P-channel MOSFET ELM14801AA-N General description Features ELM14801AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on) ... See More ⇒
9.17. Size:390K elm
elm14420aa.pdf
Single N-channel MOSFET ELM14420AA-N General description Features ELM14420AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=13.7A (Vgs=10V) resistance. Rds(on) ... See More ⇒
9.18. Size:670K elm
elm14606aa.pdf
Complementary MOSFET ELM14606AA-N General Description Features ELM14606AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=6.9A(Vgs=10V) Id=-6A(Vgs=-10V) Rds(on) ... See More ⇒
9.19. Size:410K elm
elm14805aa.pdf
Dual P-channel MOSFET ELM14805AA-N General description Features ELM14805AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on) and low gate charge. Id=-8A (Vgs=-20V) Rds(on) ... See More ⇒
9.20. Size:409K elm
elm14407aa.pdf
Single P-channel MOSFET ELM14407AA-N General description Features ELM14407AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12A (Vgs=-20V) resistance. Rds(on) ... See More ⇒
9.21. Size:415K elm
elm14406aa.pdf
Single N-channel MOSFET ELM14406AA-N General description Features ELM14406AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=11.5A (Vgs=10V) resistance. Rds(on) ... See More ⇒
9.22. Size:382K elm
elm14440aa.pdf
Single N-channel MOSFET ELM14440AA-N General description Features ELM14440AA-N uses advanced trench technology to Vds=60V provide excellent Rds(on), low gate charge and low gate Id=5A (Vgs=10V) resistance. Rds(on) ... See More ⇒
9.23. Size:388K elm
elm14826aa.pdf
Dual N-channel MOSFET ELM14826AA-N General description Features ELM14826AA-N uses advanced trench technology to Vds=60V provide excellent Rds(on) and low gate charge. Id=6.3A (Vgs=10V) Rds(on) ... See More ⇒
9.24. Size:1111K elm
elm14803ab.pdf
Dual P-channel MOSFET ELM14803AB-N General description Features ELM14803AB-N uses advanced trench technology to Vds=-30V provide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on) ... See More ⇒
9.25. Size:434K elm
elm14418aa.pdf
Single N-channel MOSFET ELM14418AA-N General description Features ELM14418AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=11.5A (Vgs=20V) resistance. Rds(on) ... See More ⇒
9.26. Size:394K elm
elm14405aa.pdf
Single P-channel MOSFET ELM14405AA-N General description Features ELM14405AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-6A (Vgs=-10V) resistance. Rds(on) ... See More ⇒
9.27. Size:402K elm
elm14404aa.pdf
Single N-channel MOSFET ELM14404AA-N General description Features ELM14404AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=8.5A (Vgs=10V) resistance. Rds(on) ... See More ⇒
9.28. Size:390K elm
elm14423aa.pdf
Single P-channel MOSFET ELM14423AA-N General description Features ELM14423AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-20V) resistance. Internal ESD protection is included. Rds(on) ... See More ⇒
9.29. Size:392K elm
elm14812aa.pdf
Dual N-channel MOSFET ELM14812AA-N General description Features ELM14812AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on) ... See More ⇒
9.30. Size:392K elm
elm14800aa.pdf
Dual N-channel MOSFET ELM14800AA-N General description Features ELM14800AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on) ... See More ⇒
Detailed specifications: ELM13414CA, ELM13415CA, ELM13416CA, ELM13418CA, ELM13419CA, ELM13421CA, ELM13424CA, ELM13434CA, EMB04N03H, ELM14404AA, ELM14405AA, ELM14406AA, ELM14407AA, ELM14408AA, ELM14409AA, ELM14411AA, ELM14418AA
Keywords - ELM14354AA MOSFET specs
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