ELM14354AA - описание и поиск аналогов

 ..1. Size:927K  elm
 elm14354aa.pdf 

Single N-channel MOSFET ELM14354AA-N General description Features ELM14354AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=23A (Vgs=10V) resistance. Rds(on)

 9.1. Size:414K  elm
 elm14702aa-n.pdf 

Single N-channel MOSFET with schottky diode ELM14702AA-N General description Features ELM14702AA-N uses advanced trench Vds=30V Schottky diode technology to provide excellent Rds(on) Id=11A Vds(V)=30V and low gate charge. Rds(on)

 9.2. Size:414K  elm
 elm14409aa.pdf 

Single P-channel MOSFET ELM14409AA-N General description Features ELM14409AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-10V) resistance. Rds(on)

 9.3. Size:458K  elm
 elm14430aa.pdf 

Single N-channel MOSFET ELM14430AA-N General description Features ELM14430AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=18A (Vgs=10V) resistance. Rds(on)

 9.4. Size:394K  elm
 elm14427aa.pdf 

Single P-channel MOSFET ELM14427AA-N General description Features ELM14427AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12.5A (Vgs=-20V) resistance. Internal ESD protection is included. Rds(on)

 9.5. Size:410K  elm
 elm14411aa.pdf 

Single P-channel MOSFET ELM14411AA-N General description Features ELM14411AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A (Vgs=-10V) resistance. Rds(on)

 9.6. Size:389K  elm
 elm14822aa.pdf 

Dual N-channel MOSFET ELM14822AA-N General description Features ELM14822AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on) and low gate charge. Id=8.5A (Vgs=10V) Rds(on)

 9.7. Size:394K  elm
 elm14419aa.pdf 

Single P-channel MOSFET ELM14419AA-N General description Features ELM14419AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-9.7A (Vgs=-10V) resistance. Rds(on)

 9.8. Size:401K  elm
 elm14468aa.pdf 

Single N-channel MOSFET ELM14468AA-N General description Features ELM14468AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=11.6A (Vgs=10V) resistance. Rds(on)

 9.9. Size:389K  elm
 elm14425aa.pdf 

Single P-channel MOSFET ELM14425AA-N General description Features ELM14425AA-N uses advanced trench technology to Vds=-38V provide excellent Rds(on), low gate charge and low gate Id=-14A (Vgs=-20V) resistance. Internal ESD protection is included. Rds(on)

 9.10. Size:428K  elm
 elm14408aa.pdf 

Single N-channel MOSFET ELM14408AA-N General description Features ELM14408AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=12A (Vgs=10V) resistance. Rds(on)

 9.11. Size:399K  elm
 elm14466aa.pdf 

Single N-channel MOSFET ELM14466AA-N General description Features ELM14466AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=9.4A (Vgs=10V) resistance. Rds(on)

 9.12. Size:395K  elm
 elm14806aa.pdf 

Dual N-channel MOSFET ELM14806AA-N General description Features ELM14806AA-N uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=9.4A (Vgs=10V) operation with gate voltages as low as 1.8V and internal Rds(on)

 9.13. Size:401K  elm
 elm14828aa.pdf 

Dual N-channel MOSFET ELM14828AA-N General description Features ELM14828AA-N uses advanced trench technology to Vds=60V provide excellent Rds(on) and low gate charge. Id=4.5A (Vgs=10V) Rds(on)

 9.14. Size:569K  elm
 elm14604aa.pdf 

Complementary MOSFET ELM14604AA-N General Description Features ELM14604AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=6.9A(Vgs=10V) Id=-5A(Vgs=-10V) Rds(on)

 9.15. Size:624K  elm
 elm14614aa.pdf 

Complementary MOSFET ELM14614AA-N General Description Features ELM14614AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=40V Vds=-40V and low gate charge. Id=6A(Vgs=10V) Id=-5A(Vgs=-10V) Rds(on)

 9.16. Size:389K  elm
 elm14801aa.pdf 

Dual P-channel MOSFET ELM14801AA-N General description Features ELM14801AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on)

 9.17. Size:390K  elm
 elm14420aa.pdf 

Single N-channel MOSFET ELM14420AA-N General description Features ELM14420AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=13.7A (Vgs=10V) resistance. Rds(on)

 9.18. Size:670K  elm
 elm14606aa.pdf 

Complementary MOSFET ELM14606AA-N General Description Features ELM14606AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=6.9A(Vgs=10V) Id=-6A(Vgs=-10V) Rds(on)

 9.19. Size:410K  elm
 elm14805aa.pdf 

Dual P-channel MOSFET ELM14805AA-N General description Features ELM14805AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on) and low gate charge. Id=-8A (Vgs=-20V) Rds(on)

 9.20. Size:409K  elm
 elm14407aa.pdf 

Single P-channel MOSFET ELM14407AA-N General description Features ELM14407AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12A (Vgs=-20V) resistance. Rds(on)

 9.21. Size:415K  elm
 elm14406aa.pdf 

Single N-channel MOSFET ELM14406AA-N General description Features ELM14406AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=11.5A (Vgs=10V) resistance. Rds(on)

 9.22. Size:382K  elm
 elm14440aa.pdf 

Single N-channel MOSFET ELM14440AA-N General description Features ELM14440AA-N uses advanced trench technology to Vds=60V provide excellent Rds(on), low gate charge and low gate Id=5A (Vgs=10V) resistance. Rds(on)

 9.23. Size:388K  elm
 elm14826aa.pdf 

Dual N-channel MOSFET ELM14826AA-N General description Features ELM14826AA-N uses advanced trench technology to Vds=60V provide excellent Rds(on) and low gate charge. Id=6.3A (Vgs=10V) Rds(on)

 9.24. Size:1111K  elm
 elm14803ab.pdf 

Dual P-channel MOSFET ELM14803AB-N General description Features ELM14803AB-N uses advanced trench technology to Vds=-30V provide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on)

 9.25. Size:434K  elm
 elm14418aa.pdf 

Single N-channel MOSFET ELM14418AA-N General description Features ELM14418AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=11.5A (Vgs=20V) resistance. Rds(on)

 9.26. Size:394K  elm
 elm14405aa.pdf 

Single P-channel MOSFET ELM14405AA-N General description Features ELM14405AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-6A (Vgs=-10V) resistance. Rds(on)

 9.27. Size:402K  elm
 elm14404aa.pdf 

Single N-channel MOSFET ELM14404AA-N General description Features ELM14404AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=8.5A (Vgs=10V) resistance. Rds(on)

 9.28. Size:390K  elm
 elm14423aa.pdf 

Single P-channel MOSFET ELM14423AA-N General description Features ELM14423AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-20V) resistance. Internal ESD protection is included. Rds(on)

 9.29. Size:392K  elm
 elm14812aa.pdf 

Dual N-channel MOSFET ELM14812AA-N General description Features ELM14812AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on)

 9.30. Size:392K  elm
 elm14800aa.pdf 

Dual N-channel MOSFET ELM14800AA-N General description Features ELM14800AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on)

 9.31. Size:890K  cn vbsemi
 elm14800aa.pdf