ELM14409AA MOSFET. Datasheet pdf. Equivalent
Type Designator: ELM14409AA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 3 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.7 V
Maximum Drain Current |Id|: 15 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 100 nC
Rise Time (tr): 16.5 nS
Drain-Source Capacitance (Cd): 945 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm
Package: SOP-8
ELM14409AA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ELM14409AA Datasheet (PDF)
0.1. elm14409aa.pdf 
Size:414K _elm
Single P-channel MOSFET ELM14409AA-N ■General description ■Features ELM14409AA-N uses advanced trench technology to • Vds=-30V provide excellent Rds(on), low gate charge and low gate • Id=-15A (Vgs=-10V) resistance. • Rds(on) < 7.5mΩ (Vgs=-10V) • Rds(on) < 12mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds -30 V ± Ga
7.1. elm14407aa.pdf Size:409K _elm
Single P-channel MOSFET ELM14407AA-N ■General description ■Features ELM14407AA-N uses advanced trench technology to • Vds=-30V provide excellent Rds(on), low gate charge and low gate • Id=-12A (Vgs=-20V) resistance. • Rds(on) < 13mΩ (Vgs=-20V) • Rds(on) < 14mΩ (Vgs=-10V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds -30 V ± Gate
7.2. elm14408aa.pdf Size:428K _elm
Single N-channel MOSFET ELM14408AA-N ■General description ■Features ELM14408AA-N uses advanced trench technology to • Vds=30V provide excellent Rds(on), low gate charge and low gate • Id=12A (Vgs=10V) resistance. • Rds(on) < 13mΩ (Vgs=10V) • Rds(on) < 16mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds 30 V ± Gate-sour
7.3. elm14404aa.pdf Size:402K _elm
Single N-channel MOSFET ELM14404AA-N ■General description ■Features ELM14404AA-N uses advanced trench technology to • Vds=30V provide excellent Rds(on), low gate charge and low gate • Id=8.5A (Vgs=10V) resistance. • Rds(on) < 24mΩ (Vgs=10V) • Rds(on) < 30mΩ (Vgs=4.5V) • Rds(on) < 48mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-sourc
7.4. elm14406aa.pdf Size:415K _elm
Single N-channel MOSFET ELM14406AA-N ■General description ■Features ELM14406AA-N uses advanced trench technology to • Vds=30V provide excellent Rds(on), low gate charge and low gate • Id=11.5A (Vgs=10V) resistance. • Rds(on) < 14mΩ (Vgs=10V) • Rds(on) < 16.5mΩ (Vgs=4.5V) • Rds(on) < 26mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-so
7.5. elm14405aa.pdf Size:394K _elm
Single P-channel MOSFET ELM14405AA-N ■General description ■Features ELM14405AA-N uses advanced trench technology to • Vds=-30V provide excellent Rds(on), low gate charge and low gate • Id=-6A (Vgs=-10V) resistance. • Rds(on) < 50mΩ (Vgs=-10V) • Rds(on) < 85mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds -30 V ± Gate
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
