All MOSFET. ELM14409AA Datasheet

 

ELM14409AA MOSFET. Datasheet pdf. Equivalent

Type Designator: ELM14409AA

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 3 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.7 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 100 nC

Rise Time (tr): 16.5 nS

Drain-Source Capacitance (Cd): 945 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm

Package: SOP-8

ELM14409AA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ELM14409AA Datasheet (PDF)

0.1. elm14409aa.pdf Size:414K _elm

ELM14409AA
ELM14409AA

Single P-channel MOSFET ELM14409AA-N ■General description ■Features ELM14409AA-N uses advanced trench technology to • Vds=-30V provide excellent Rds(on), low gate charge and low gate • Id=-15A (Vgs=-10V) resistance. • Rds(on) < 7.5mΩ (Vgs=-10V) • Rds(on) < 12mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds -30 V ± Ga

7.1. elm14407aa.pdf Size:409K _elm

ELM14409AA
ELM14409AA

Single P-channel MOSFET ELM14407AA-N ■General description ■Features ELM14407AA-N uses advanced trench technology to • Vds=-30V provide excellent Rds(on), low gate charge and low gate • Id=-12A (Vgs=-20V) resistance. • Rds(on) < 13mΩ (Vgs=-20V) • Rds(on) < 14mΩ (Vgs=-10V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds -30 V ± Gate

7.2. elm14408aa.pdf Size:428K _elm

ELM14409AA
ELM14409AA

Single N-channel MOSFET ELM14408AA-N ■General description ■Features ELM14408AA-N uses advanced trench technology to • Vds=30V provide excellent Rds(on), low gate charge and low gate • Id=12A (Vgs=10V) resistance. • Rds(on) < 13mΩ (Vgs=10V) • Rds(on) < 16mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds 30 V ± Gate-sour

 7.3. elm14404aa.pdf Size:402K _elm

ELM14409AA
ELM14409AA

Single N-channel MOSFET ELM14404AA-N ■General description ■Features ELM14404AA-N uses advanced trench technology to • Vds=30V provide excellent Rds(on), low gate charge and low gate • Id=8.5A (Vgs=10V) resistance. • Rds(on) < 24mΩ (Vgs=10V) • Rds(on) < 30mΩ (Vgs=4.5V) • Rds(on) < 48mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-sourc

7.4. elm14406aa.pdf Size:415K _elm

ELM14409AA
ELM14409AA

Single N-channel MOSFET ELM14406AA-N ■General description ■Features ELM14406AA-N uses advanced trench technology to • Vds=30V provide excellent Rds(on), low gate charge and low gate • Id=11.5A (Vgs=10V) resistance. • Rds(on) < 14mΩ (Vgs=10V) • Rds(on) < 16.5mΩ (Vgs=4.5V) • Rds(on) < 26mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-so

 7.5. elm14405aa.pdf Size:394K _elm

ELM14409AA
ELM14409AA

Single P-channel MOSFET ELM14405AA-N ■General description ■Features ELM14405AA-N uses advanced trench technology to • Vds=-30V provide excellent Rds(on), low gate charge and low gate • Id=-6A (Vgs=-10V) resistance. • Rds(on) < 50mΩ (Vgs=-10V) • Rds(on) < 85mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Note Drain-source voltage Vds -30 V ± Gate

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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