ELM14419AA Datasheet and Replacement
Type Designator: ELM14419AA
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 9.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 319
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02
Ohm
Package:
SOP-8
- MOSFET Cross-Reference Search
ELM14419AA Datasheet (PDF)
..1. Size:394K elm
elm14419aa.pdf 
Single P-channel MOSFETELM14419AA-NGeneral description Features ELM14419AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-9.7A (Vgs=-10V)resistance. Rds(on)
7.1. Size:410K elm
elm14411aa.pdf 
Single P-channel MOSFETELM14411AA-NGeneral description Features ELM14411AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A (Vgs=-10V)resistance. Rds(on)
7.2. Size:434K elm
elm14418aa.pdf 
Single N-channel MOSFETELM14418AA-NGeneral description Features ELM14418AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=11.5A (Vgs=20V)resistance. Rds(on)
8.1. Size:414K elm
elm14409aa.pdf 
Single P-channel MOSFETELM14409AA-NGeneral description Features ELM14409AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-10V)resistance. Rds(on)
8.2. Size:458K elm
elm14430aa.pdf 
Single N-channel MOSFETELM14430AA-NGeneral description Features ELM14430AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=18A (Vgs=10V)resistance. Rds(on)
8.3. Size:394K elm
elm14427aa.pdf 
Single P-channel MOSFETELM14427AA-NGeneral description Features ELM14427AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12.5A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)
8.4. Size:401K elm
elm14468aa.pdf 
Single N-channel MOSFETELM14468AA-NGeneral description Features ELM14468AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=11.6A (Vgs=10V)resistance. Rds(on)
8.5. Size:389K elm
elm14425aa.pdf 
Single P-channel MOSFETELM14425AA-NGeneral description Features ELM14425AA-N uses advanced trench technology to Vds=-38Vprovide excellent Rds(on), low gate charge and low gate Id=-14A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)
8.6. Size:428K elm
elm14408aa.pdf 
Single N-channel MOSFETELM14408AA-NGeneral description Features ELM14408AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=12A (Vgs=10V)resistance. Rds(on)
8.7. Size:399K elm
elm14466aa.pdf 
Single N-channel MOSFETELM14466AA-NGeneral description Features ELM14466AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=9.4A (Vgs=10V)resistance. Rds(on)
8.8. Size:390K elm
elm14420aa.pdf 
Single N-channel MOSFETELM14420AA-NGeneral description Features ELM14420AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=13.7A (Vgs=10V)resistance. Rds(on)
8.9. Size:409K elm
elm14407aa.pdf 
Single P-channel MOSFETELM14407AA-NGeneral description Features ELM14407AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A (Vgs=-20V)resistance. Rds(on)
8.10. Size:415K elm
elm14406aa.pdf 
Single N-channel MOSFETELM14406AA-NGeneral description Features ELM14406AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=11.5A (Vgs=10V)resistance. Rds(on)
8.11. Size:382K elm
elm14440aa.pdf 
Single N-channel MOSFETELM14440AA-NGeneral description Features ELM14440AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=5A (Vgs=10V)resistance. Rds(on)
8.12. Size:394K elm
elm14405aa.pdf 
Single P-channel MOSFETELM14405AA-NGeneral description Features ELM14405AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-6A (Vgs=-10V)resistance. Rds(on)
8.13. Size:402K elm
elm14404aa.pdf 
Single N-channel MOSFETELM14404AA-NGeneral description Features ELM14404AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=8.5A (Vgs=10V)resistance. Rds(on)
8.14. Size:390K elm
elm14423aa.pdf 
Single P-channel MOSFETELM14423AA-NGeneral description Features ELM14423AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)
Datasheet: WPB4002
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History: VMM85-02F
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Keywords - ELM14419AA MOSFET datasheet
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