All MOSFET. ELM14427AA Datasheet

 

ELM14427AA Datasheet and Replacement


   Type Designator: ELM14427AA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 12.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 41 nC
   trⓘ - Rise Time: 10.3 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP-8
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ELM14427AA Datasheet (PDF)

 ..1. Size:394K  elm
 elm14427aa.pdf pdf_icon

ELM14427AA

Single P-channel MOSFETELM14427AA-NGeneral description Features ELM14427AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12.5A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)

 7.1. Size:389K  elm
 elm14425aa.pdf pdf_icon

ELM14427AA

Single P-channel MOSFETELM14425AA-NGeneral description Features ELM14425AA-N uses advanced trench technology to Vds=-38Vprovide excellent Rds(on), low gate charge and low gate Id=-14A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)

 7.2. Size:390K  elm
 elm14420aa.pdf pdf_icon

ELM14427AA

Single N-channel MOSFETELM14420AA-NGeneral description Features ELM14420AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=13.7A (Vgs=10V)resistance. Rds(on)

 7.3. Size:390K  elm
 elm14423aa.pdf pdf_icon

ELM14427AA

Single P-channel MOSFETELM14423AA-NGeneral description Features ELM14423AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-15A (Vgs=-20V)resistance. Internal ESD protection is included. Rds(on)

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History: IRFB7446G

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