ELM14800AA Datasheet and Replacement
Type Designator: ELM14800AA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.1 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: SOP-8
ELM14800AA substitution
ELM14800AA Datasheet (PDF)
elm14800aa.pdf

Dual N-channel MOSFETELM14800AA-NGeneral description Features ELM14800AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on)
elm14800aa.pdf

ELM14800AAwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box
elm14806aa.pdf

Dual N-channel MOSFETELM14806AA-NGeneral description Features ELM14806AA-N uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=9.4A (Vgs=10V)operation with gate voltages as low as 1.8V and internal Rds(on)
elm14801aa.pdf

Dual P-channel MOSFETELM14801AA-NGeneral description Features ELM14801AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on) and low gate charge. Id=-5A (Vgs=-10V) Rds(on)
Datasheet: ELM14430AA , ELM14440AA , ELM14466AA , ELM14468AA , ELM14604AA , ELM14606AA , ELM14614AA , ELM14702AA-N , IRF640N , ELM14801AA , ELM14803AB , ELM14805AA , ELM14806AA , ELM14812AA , ELM14822AA , ELM14826AA , ELM14828AA .
History: IXFA18N65X2 | AFN1443 | 2SK3404-Z | IRF1405Z | SM6F03NSU | 2SK1458 | SI4418DY
Keywords - ELM14800AA MOSFET datasheet
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History: IXFA18N65X2 | AFN1443 | 2SK3404-Z | IRF1405Z | SM6F03NSU | 2SK1458 | SI4418DY



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