ELM16601EA MOSFET PDF: NP-Ch, 30V, 3.4A. Datasheet. Full specification with pinout and replacement list

ELM16601EA Specs and Replacement

   Type Designator: ELM16601EA
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 54.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-26

ELM16601EA substitution

- MOSFET ⓘ Cross-Reference Search

ELM16601EA datasheet

..1. Size:579K elm
elm16601ea.pdf pdf_icon

Complementary MOSFET ELM16601EA-S General Description Features ELM16601EA-S uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=3.4A(Vgs=10V) Id=-2.3A(Vgs=-10V) Rds(on) ... See More ⇒

7.1. Size:573K elm
elm16604ea.pdf pdf_icon

... See More ⇒

9.1. Size:413K elm
elm16405ea.pdf pdf_icon

Single P-channel MOSFET ELM16405EA-S General description Features ELM16405EA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-5A (Vgs=-10V) resistance. Rds(on) ... See More ⇒

9.2. Size:438K elm
elm16408ea.pdf pdf_icon

Single N-channel MOSFET ELM16408EA-S General description Features ELM16408EA-S uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=8.8A (Vgs=10V) operation with gate voltages as low as 1.8V and internal Rds(on) ... See More ⇒