ELM17408GA Specs and Replacement
Type Designator: ELM17408GA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
Package: SC-70-6
ELM17408GA substitution
- MOSFET ⓘ Cross-Reference Search
ELM17408GA datasheet
elm17408ga.pdf
Single N-channel MOSFET ELM17408GA-S General description Features ELM17408GA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and operation Id=2.2A (Vgs=4.5V) with gate voltages as low as 1.8V. Rds(on) ... See More ⇒
elm17400fa.pdf
Single N-channel MOSFET ELM17400FA-S General description Features ELM17400FA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and operation Id=1.7A (Vgs=10V) with gate voltages as low as 2.5V. Rds(on) ... See More ⇒
elm17401fa.pdf
Single P-channel MOSFET ELM17401FA-S General description Features ELM17401FA-S uses advanced trench technology Vds=-30V to provide excellent Rds(on), low gate charge and Id=-1.2A (Vgs=-10V) operation with gate voltages as low as 2.5V. Rds(on) ... See More ⇒
elm17412ga.pdf
Single N-channel MOSFET ELM17412GA-S General description Features ELM17412GA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and operation Id=2.1A (Vgs=10V) with gate voltages as low as 2.5V. Rds(on) ... See More ⇒
Detailed specifications: ELM16405EA , ELM16408EA , ELM16409EA , ELM16601EA , ELM16604EA , ELM16800EA , ELM17400FA , ELM17401FA , IRF4905 , ELM17412GA , ELM17600GA , ELM17800GA , ELM18801BA , ELM18806BA , ELM18810BA , ELM18814BA , ELM18822BA .
Keywords - ELM17408GA MOSFET specs
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