ELM24603HA Datasheet and Replacement
Type Designator: ELM24603HA
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.4 nS
Cossⓘ - Output Capacitance: 61 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO-252-5
ELM24603HA substitution
ELM24603HA Datasheet (PDF)
elm24603ha.pdf

Complementary MOSFET ELM24603HA-SGeneral Description Features ELM24603HA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=60V Vds=-60Vand low gate charge. Id=12A(Vgs=10V) Id=-12A(Vgs=-10V) Rds(on)
elm24604ha.pdf

Complementary MOSFET ELM24604HA-SGeneral Description Features ELM24604HA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=40V Vds=-40Vand low gate charge. Id=8A(Vgs=10V) Id=-8A(Vgs=-10V) Rds(on)
Datasheet: ELM17412GA , ELM17600GA , ELM17800GA , ELM18801BA , ELM18806BA , ELM18810BA , ELM18814BA , ELM18822BA , TK10A60D , ELM24604HA , ELM321504A , ELM321604A , ELM322806A , ELM323506A , ELM32400LA , ELM32401LA-S , ELM32402LA .
History: 1N60 | CED540N | PJW1NA50 | AOD418 | KF9N50P | ELM322806A | HGB210N20S
Keywords - ELM24603HA MOSFET datasheet
ELM24603HA cross reference
ELM24603HA equivalent finder
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History: 1N60 | CED540N | PJW1NA50 | AOD418 | KF9N50P | ELM322806A | HGB210N20S



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