All MOSFET. ELM24603HA Datasheet

 

ELM24603HA Datasheet and Replacement


   Type Designator: ELM24603HA
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.4 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO-252-5
 

 ELM24603HA substitution

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ELM24603HA Datasheet (PDF)

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ELM24603HA

Complementary MOSFET ELM24603HA-SGeneral Description Features ELM24603HA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=60V Vds=-60Vand low gate charge. Id=12A(Vgs=10V) Id=-12A(Vgs=-10V) Rds(on)

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 elm24604ha.pdf pdf_icon

ELM24603HA

Complementary MOSFET ELM24604HA-SGeneral Description Features ELM24604HA-S uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=40V Vds=-40Vand low gate charge. Id=8A(Vgs=10V) Id=-8A(Vgs=-10V) Rds(on)

Datasheet: ELM17412GA , ELM17600GA , ELM17800GA , ELM18801BA , ELM18806BA , ELM18810BA , ELM18814BA , ELM18822BA , TK10A60D , ELM24604HA , ELM321504A , ELM321604A , ELM322806A , ELM323506A , ELM32400LA , ELM32401LA-S , ELM32402LA .

History: DMN3065LW | IXTM4N100A | BL3N150-P | NCEAP15ND10AG | SI2303CDS | JCS18N25VC | IXFN82N60Q3

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