All MOSFET. ELM32412LA Datasheet

 

ELM32412LA Datasheet and Replacement


   Type Designator: ELM32412LA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-252
 

 ELM32412LA substitution

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ELM32412LA Datasheet (PDF)

 ..1. Size:473K  elm
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ELM32412LA

Single N-channel MOSFETELM32412LA-SGeneral description Features ELM32412LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)

 7.1. Size:452K  elm
 elm32414la.pdf pdf_icon

ELM32412LA

Single N-channel MOSFETELM32414LA-SGeneral description Features ELM32414LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=35A resistance. Rds(on)

 7.2. Size:658K  elm
 elm32418la.pdf pdf_icon

ELM32412LA

Single N-channel MOSFETELM32418LA-SGeneral description Features ELM32418LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)

 7.3. Size:591K  elm
 elm32416la.pdf pdf_icon

ELM32412LA

Single N-channel MOSFETELM32416LA-SGeneral description Features ELM32416LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=46A resistance. Rds(on)

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Datasheet: ELM32401LA-S , ELM32402LA , ELM32403LA , ELM32404LA , ELM32405LA , ELM32407LA , ELM32408LA , ELM32409LA-S , BS170 , ELM32414LA , ELM32416LA , ELM32418LA , ELM32420LA , ELM32422LA , ELM32424LA , ELM32428LA , ELM32430LA .

History: PJX8808 | C3M0065090D | 2N7002ET | ELM32407LA | SPB77N06S2-12 | ELM32414LA | RCX051N25

Keywords - ELM32412LA MOSFET datasheet

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