ELM32412LA Datasheet and Replacement
Type Designator: ELM32412LA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 165 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO-252
ELM32412LA substitution
ELM32412LA Datasheet (PDF)
elm32412la.pdf

Single N-channel MOSFETELM32412LA-SGeneral description Features ELM32412LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)
elm32414la.pdf

Single N-channel MOSFETELM32414LA-SGeneral description Features ELM32414LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=35A resistance. Rds(on)
elm32418la.pdf

Single N-channel MOSFETELM32418LA-SGeneral description Features ELM32418LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)
elm32416la.pdf

Single N-channel MOSFETELM32416LA-SGeneral description Features ELM32416LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=46A resistance. Rds(on)
Datasheet: ELM32401LA-S , ELM32402LA , ELM32403LA , ELM32404LA , ELM32405LA , ELM32407LA , ELM32408LA , ELM32409LA-S , 18N50 , ELM32414LA , ELM32416LA , ELM32418LA , ELM32420LA , ELM32422LA , ELM32424LA , ELM32428LA , ELM32430LA .
History: NCE60N1K0I | AOE6932 | AP4543GEH-HF | TSM75N75CZ | PDN2309S
Keywords - ELM32412LA MOSFET datasheet
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History: NCE60N1K0I | AOE6932 | AP4543GEH-HF | TSM75N75CZ | PDN2309S



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