All MOSFET. ELM32414LA Datasheet

 

ELM32414LA Datasheet and Replacement


   Type Designator: ELM32414LA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-252
 

 ELM32414LA substitution

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ELM32414LA Datasheet (PDF)

 ..1. Size:452K  elm
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ELM32414LA

Single N-channel MOSFETELM32414LA-SGeneral description Features ELM32414LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=35A resistance. Rds(on)

 7.1. Size:658K  elm
 elm32418la.pdf pdf_icon

ELM32414LA

Single N-channel MOSFETELM32418LA-SGeneral description Features ELM32418LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)

 7.2. Size:591K  elm
 elm32416la.pdf pdf_icon

ELM32414LA

Single N-channel MOSFETELM32416LA-SGeneral description Features ELM32416LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=46A resistance. Rds(on)

 7.3. Size:473K  elm
 elm32412la.pdf pdf_icon

ELM32414LA

Single N-channel MOSFETELM32412LA-SGeneral description Features ELM32412LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)

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Datasheet: ELM32402LA , ELM32403LA , ELM32404LA , ELM32405LA , ELM32407LA , ELM32408LA , ELM32409LA-S , ELM32412LA , 4N60 , ELM32416LA , ELM32418LA , ELM32420LA , ELM32422LA , ELM32424LA , ELM32428LA , ELM32430LA , ELM32434LA .

History: SPB77N06S2-12 | PJX8808 | SUD50N10-34P | 2N7002ET | JMSH0406PGDQ | ELM32407LA | C3M0065090D

Keywords - ELM32414LA MOSFET datasheet

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