RFP7N10LE Datasheet and Replacement
Type Designator: RFP7N10LE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 125 nC
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO220AB
RFP7N10LE substitution
RFP7N10LE Datasheet (PDF)
..1. Size:136K harris semi
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RFD7N10LE, RFD7N10LESMS E M I C O N D U C T O RRFP7N10LE7A, 100V, ESD Rated, Avalanche Rated, Logic LevelN-Channel Enhancement-Mode Power MOSFETs (MegaFETs)February 1994Features PackagingJEDEC TO-220AB 7A, 100VTOP VIEW rDS(ON) = 0.300SOURCE 2KV ESD ProtectedDRAINDRAIN(FLANGE) Temperature Compensating PSPICE Model GATE Can be Driven Directly fr
Datasheet: RFP4N06L , RFP4N100 , RFP50N05L , RFP50N06 , RFP50N06LE , RFP60P03 , RFP70N03 , RFP70N06 , EMB04N03H , RFP8N20L , RFP8P05 , RFP8P06E , RFP8P06LE , RFP8P10 , RFT1P06E , RFT2P03L , RFT3055LE .
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