RFP7N10LE Datasheet. Specs and Replacement

Type Designator: RFP7N10LE  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 47 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO220AB

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RFP7N10LE datasheet

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RFP7N10LE

RFD7N10LE, RFD7N10LESM S E M I C O N D U C T O R RFP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs (MegaFETs) February 1994 Features Packaging JEDEC TO-220AB 7A, 100V TOP VIEW rDS(ON) = 0.300 SOURCE 2KV ESD Protected DRAIN DRAIN (FLANGE) Temperature Compensating PSPICE Model GATE Can be Driven Directly fr... See More ⇒

Detailed specifications: RFP4N06L, RFP4N100, RFP50N05L, RFP50N06, RFP50N06LE, RFP60P03, RFP70N03, RFP70N06, IRFZ46N, RFP8N20L, RFP8P05, RFP8P06E, RFP8P06LE, RFP8P10, RFT1P06E, RFT2P03L, RFT3055LE

Keywords - RFP7N10LE MOSFET specs

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