CMT04N60XN220FP Datasheet and Replacement
Type Designator: CMT04N60XN220FP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO220FP
CMT04N60XN220FP substitution
CMT04N60XN220FP Datasheet (PDF)
cmt04n60.pdf
CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to Higher Current Rating withstand high energy in the avalanche mode and switch Lower Rds(on)efficiently. This new high energy device also offers a Lower Capacitancesdrain-to-source diode with fast recovery time. Designed for Lower Total Gate Charge high voltage, high speed switc
Datasheet: ARF446 , ARF447 , BUZ380 , CEP703AL , CEB703AL , CMT04N60GN220 , CMT04N60XN220 , CMT04N60GN220FP , AOD4184A , CMT04N60GN252 , CMT04N60XN252 , DG2N60-251 , DG2N60-252 , DG2N60-220 , DG2N60-220F , DG2N60-126 , DG2N65-251 .
History: H2302A
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: H2302A
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