CMT04N60XN252 PDF and Equivalents Search

 

CMT04N60XN252 Specs and Replacement

Type Designator: CMT04N60XN252

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO252

CMT04N60XN252 substitution

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CMT04N60XN252 datasheet

 6.1. Size:341K  champion
 cmt04n60.pdf pdf_icon

CMT04N60XN252

CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to Higher Current Rating withstand high energy in the avalanche mode and switch Lower Rds(on) efficiently. This new high energy device also offers a Lower Capacitances drain-to-source diode with fast recovery time. Designed for Lower Total Gate Charge high voltage, high speed switc... See More ⇒

Detailed specifications: BUZ380, CEP703AL, CEB703AL, CMT04N60GN220, CMT04N60XN220, CMT04N60GN220FP, CMT04N60XN220FP, CMT04N60GN252, 60N06, DG2N60-251, DG2N60-252, DG2N60-220, DG2N60-220F, DG2N60-126, DG2N65-251, DG2N65-252, DG2N65-220

Keywords - CMT04N60XN252 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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