DG2N60-252 PDF and Equivalents Search

 

DG2N60-252 Specs and Replacement

Type Designator: DG2N60-252

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm

Package: TO252

DG2N60-252 substitution

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DG2N60-252 datasheet

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DG2N60-252

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DG2N60-252

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Detailed specifications: CEB703AL, CMT04N60GN220, CMT04N60XN220, CMT04N60GN220FP, CMT04N60XN220FP, CMT04N60GN252, CMT04N60XN252, DG2N60-251, AO4468, DG2N60-220, DG2N60-220F, DG2N60-126, DG2N65-251, DG2N65-252, DG2N65-220, DG2N65-220F, DG2N65-126

Keywords - DG2N60-252 MOSFET specs

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