All MOSFET. DG2N60-252 Datasheet

 

DG2N60-252 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DG2N60-252
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO252

 DG2N60-252 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DG2N60-252 Datasheet (PDF)

 8.1. Size:1513K  jiangsu
 dg2n60.pdf

DG2N60-252 DG2N60-252

JiangSu Dongchen Electronics Technology Co.,LtdDG2N60N 201603-AN-CHANNEL ENHANCEMENT MODE MOSFET General DescriptionDG2N60N

 9.1. Size:1477K  jiangsu
 dg2n65.pdf

DG2N60-252 DG2N60-252

DG2N65V1.0N N-CHANNE ENHANCEMENT MODE MOSFET General Description DG2N65N

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SM3439NHQA

 

 
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