DG2N65-251 Datasheet and Replacement
Type Designator: DG2N65-251
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 39 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO251
DG2N65-251 substitution
DG2N65-251 Datasheet (PDF)
dg2n65.pdf
DG2N65V1.0N N-CHANNE ENHANCEMENT MODE MOSFET General Description DG2N65N
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JiangSu Dongchen Electronics Technology Co.,LtdDG2N60N 201603-AN-CHANNEL ENHANCEMENT MODE MOSFET General DescriptionDG2N60N
Datasheet: CMT04N60XN220FP , CMT04N60GN252 , CMT04N60XN252 , DG2N60-251 , DG2N60-252 , DG2N60-220 , DG2N60-220F , DG2N60-126 , IRF740 , DG2N65-252 , DG2N65-220 , DG2N65-220F , DG2N65-126 , DG840 , DG840F , DH100P30 , DH100P30F .
Keywords - DG2N65-251 MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: P0850ATF | FQB19N20L
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