DG2N65-251 PDF and Equivalents Search

 

DG2N65-251 Specs and Replacement

Type Designator: DG2N65-251

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 39 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO251

DG2N65-251 substitution

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DG2N65-251 datasheet

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DG2N65-251

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DG2N65-251

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Detailed specifications: CMT04N60XN220FP, CMT04N60GN252, CMT04N60XN252, DG2N60-251, DG2N60-252, DG2N60-220, DG2N60-220F, DG2N60-126, IRF740, DG2N65-252, DG2N65-220, DG2N65-220F, DG2N65-126, DG840, DG840F, DH100P30, DH100P30F

Keywords - DG2N65-251 MOSFET specs

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