All MOSFET. DG2N65-252 Datasheet

 

DG2N65-252 Datasheet and Replacement


   Type Designator: DG2N65-252
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO252
 

 DG2N65-252 substitution

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DG2N65-252 Datasheet (PDF)

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DG2N65-252

DG2N65V1.0N N-CHANNE ENHANCEMENT MODE MOSFET General Description DG2N65N

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DG2N65-252

JiangSu Dongchen Electronics Technology Co.,LtdDG2N60N 201603-AN-CHANNEL ENHANCEMENT MODE MOSFET General DescriptionDG2N60N

Datasheet: CMT04N60GN252 , CMT04N60XN252 , DG2N60-251 , DG2N60-252 , DG2N60-220 , DG2N60-220F , DG2N60-126 , DG2N65-251 , IRF840 , DG2N65-220 , DG2N65-220F , DG2N65-126 , DG840 , DG840F , DH100P30 , DH100P30F , DH100P30B .

History: MTC3587DL8 | FDS4465F085 | H2301 | BSO350N03 | BSZ042N06NS

Keywords - DG2N65-252 MOSFET datasheet

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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