DG2N65-252 Specs and Replacement
Type Designator: DG2N65-252
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 39 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO252
DG2N65-252 substitution
- MOSFET ⓘ Cross-Reference Search
DG2N65-252 datasheet
Detailed specifications: CMT04N60GN252, CMT04N60XN252, DG2N60-251, DG2N60-252, DG2N60-220, DG2N60-220F, DG2N60-126, DG2N65-251, IRF840, DG2N65-220, DG2N65-220F, DG2N65-126, DG840, DG840F, DH100P30, DH100P30F, DH100P30B
Keywords - DG2N65-252 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SL3416
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