DH100P30 MOSFET Datasheet: P-Ch, 100V, 30A. Full specification with pinout and replacement list

DH100P30 Specs and Replacement

   Type Designator: DH100P30
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
   Package: TO220C

DH100P30 substitution

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DH100P30 datasheet

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dh100p30.pdf pdf_icon

DH100P30/DH100P30F/DH100P30I/ DH100P30E/DH100P30B/DH100P30D 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel Enhanced VDMOSFETs, Used V -100V DSS = advanced trench technology and design, provide to excellent R with low gate charge. Which accords R DSON DS(on) TYP) =35m with the RoHS standard. I = -30A D 2 Features Fast Switching Low ON... See More ⇒

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dh100p30a dh100p30af dh100p30ai dh100p30ae dh100p30ab dh100p30ad.pdf pdf_icon

DH100P30A/DH100P30AF/DH100P30AI DH100P30AE/DH100P30AB/DH100P30AD 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used 2 D advanced trench technology design, provided excellent V = -100V DSS Rdson and low gate charge. Which accords with the RoHS G R = 47m DS(on) (TYP) standard. 1 3 S ID =-30A 2 Features Low on r... See More ⇒

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dh100p30d.pdf pdf_icon

DH100P30D -100V/33m /-35A P-MOSFET Features Key Parameters VDS Low on resistance -100V RDS(on)typ. Low reverse transfer capacitances 33m ID 100% single pulse avalanche energy test -35A Ciss@10V 100% VDS test 5250pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 19nC Applications Load switch TO-252 Marking & Packing Information Part # Package ... See More ⇒

0.3. Size:1100K cn wxdh
dh100p30c dh100p30cf dh100p30ci dh100p30ce dh100p30cb dh100p30cd.pdf pdf_icon

DH100P30C/DH100P30CF/DH100P30CI DH100P30CE/DH100P30CB/DH100P30CD 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used 2 D advanced trench technology design, provided excellent V = -100V DSS Rdson and low gate charge. Which accords with the RoHS G R = 40m DS(on) (TYP) standard. 1 3 S ID =-30A 2 Features Low on r... See More ⇒

Detailed specifications: DG2N60-126 , DG2N65-251 , DG2N65-252 , DG2N65-220 , DG2N65-220F , DG2N65-126 , DG840 , DG840F , IRFZ44 , DH100P30F , DH100P30B , DH100P30D , DH100P30I , DH100P30E , F6B52HP , FP401 , FS2KM-12 .