All MOSFET. DH100P30B Datasheet

 

DH100P30B Datasheet and Replacement


   Type Designator: DH100P30B
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
   Package: TO251
 

 DH100P30B substitution

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DH100P30B Datasheet (PDF)

 6.1. Size:1193K  china
 dh100p30.pdf pdf_icon

DH100P30B

DH100P30/DH100P30F/DH100P30I/DH100P30E/DH100P30B/DH100P30D30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedV -100VDSS =advanced trench technology and design, provide toexcellent R with low gate charge. Which accords RDSON DS(on) TYP) =35mwith the RoHS standard.I = -30AD2 Features Fast Switching Low ON

 6.2. Size:1100K  cn wxdh
 dh100p30a dh100p30af dh100p30ai dh100p30ae dh100p30ab dh100p30ad.pdf pdf_icon

DH100P30B

DH100P30A/DH100P30AF/DH100P30AIDH100P30AE/DH100P30AB/DH100P30AD30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 47mDS(on) (TYP)standard.13 SID =-30A2 Features Low on r

 6.3. Size:1238K  cn wxdh
 dh100p30d.pdf pdf_icon

DH100P30B

DH100P30D -100V/33m/-35A P-MOSFET Features Key ParametersVDS Low on resistance -100VRDS(on)typ. Low reverse transfer capacitances 33mID 100% single pulse avalanche energy test -35ACiss@10V 100% VDS test 5250pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 19nCApplications Load switch TO-252Marking & Packing InformationPart # Package

 6.4. Size:1100K  cn wxdh
 dh100p30c dh100p30cf dh100p30ci dh100p30ce dh100p30cb dh100p30cd.pdf pdf_icon

DH100P30B

DH100P30C/DH100P30CF/DH100P30CIDH100P30CE/DH100P30CB/DH100P30CD30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 40mDS(on) (TYP)standard.13 SID =-30A2 Features Low on r

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Datasheet: DG2N65-252 , DG2N65-220 , DG2N65-220F , DG2N65-126 , DG840 , DG840F , DH100P30 , DH100P30F , IRF1404 , DH100P30D , DH100P30I , DH100P30E , F6B52HP , FP401 , FS2KM-12 , FS2KM-14A , FS2KM-16A .

History: FS2KM-14A | FS2KM-18A | DH100P30E | 2N6796U | SVF2N60M | FS2KM-12 | 2SK642

Keywords - DH100P30B MOSFET datasheet

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