DH100P30B Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: DH100P30B
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 120 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 80 ns
Cossⓘ - Выходная емкость: 790 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.051 Ohm
Тип корпуса: TO251
- подбор MOSFET транзистора по параметрам
DH100P30B Datasheet (PDF)
dh100p30.pdf

DH100P30/DH100P30F/DH100P30I/DH100P30E/DH100P30B/DH100P30D30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedV -100VDSS =advanced trench technology and design, provide toexcellent R with low gate charge. Which accords RDSON DS(on) TYP) =35mwith the RoHS standard.I = -30AD2 Features Fast Switching Low ON
dh100p30a dh100p30af dh100p30ai dh100p30ae dh100p30ab dh100p30ad.pdf

DH100P30A/DH100P30AF/DH100P30AIDH100P30AE/DH100P30AB/DH100P30AD30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 47mDS(on) (TYP)standard.13 SID =-30A2 Features Low on r
dh100p30d.pdf

DH100P30D -100V/33m/-35A P-MOSFET Features Key ParametersVDS Low on resistance -100VRDS(on)typ. Low reverse transfer capacitances 33mID 100% single pulse avalanche energy test -35ACiss@10V 100% VDS test 5250pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 19nCApplications Load switch TO-252Marking & Packing InformationPart # Package
dh100p30c dh100p30cf dh100p30ci dh100p30ce dh100p30cb dh100p30cd.pdf

DH100P30C/DH100P30CF/DH100P30CIDH100P30CE/DH100P30CB/DH100P30CD30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 40mDS(on) (TYP)standard.13 SID =-30A2 Features Low on r
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: FDS86252 | AO6804A | CS5N70A4 | SM7507NSF | WMJ38N60C2 | STW27NM60ND | IXTL2X240N055T
History: FDS86252 | AO6804A | CS5N70A4 | SM7507NSF | WMJ38N60C2 | STW27NM60ND | IXTL2X240N055T



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