RFP8P06LE Datasheet and Replacement
Type Designator: RFP8P06LE
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO220AB
RFP8P06LE substitution
RFP8P06LE Datasheet (PDF)
rfd8p06le-sm rfp8p06le.pdf
RFD8P06LE, RFD8P06LESM, RFP8P06LEData Sheet July 1999 File Number 4273.18A, 60V, 0.300 Ohm, ESD Rated, Logic FeaturesLevel, P-Channel Power MOSFET 8A, 60VThese products are P-Channel power MOSFETs rDS(ON) = 0.300manufactured using the MegaFET process. This process, 2kV ESD Protectedwhich uses feature sizes approaching those of LSI circuits,gives optimum utilizati
rfd8p06e-sm rfp8p06e.pdf
RFD8P06E, RFD8P06ESM, RFP8P06EData Sheet January 20028A, 60V, 0.300 Ohm, P-Channel Power FeaturesMOSFETs 8A, 60VThese are P-Channel power MOSFETs manufactured using rDS(ON) = 0.300the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits gives optimum utilization of silicon, r
rfd8p05-sm rfp8p05.pdf
RFD8P05, RFD8P05SM, RFP8P05Data Sheet July 1999 File Number 2384.28A, 50V, 0.300 Ohm, P-Channel Power FeaturesMOSFETs 8A, 50VThese products are P-Channel power MOSFETs rDS(ON) = 0.300manufactured using the MegaFET process. This process, UIS SOA Rating Curvewhich uses feature sizes approaching those of LSI circuits,gives optimum utilization of silicon, resulting i
Datasheet: RFP50N06LE , RFP60P03 , RFP70N03 , RFP70N06 , RFP7N10LE , RFP8N20L , RFP8P05 , RFP8P06E , 60N06 , RFP8P10 , RFT1P06E , RFT2P03L , RFT3055LE , RFW2N06RLE , RLP1N06CLE , SD10425JAA , SDF034JAA-D .
History: FCPF600N65S3R0L | DHD80N03
Keywords - RFP8P06LE MOSFET datasheet
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History: FCPF600N65S3R0L | DHD80N03
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