RFP8P06LE
MOSFET. Datasheet pdf. Equivalent
Type Designator: RFP8P06LE
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 25
nC
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 175
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3
Ohm
Package:
TO220AB
RFP8P06LE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RFP8P06LE
Datasheet (PDF)
..1. Size:106K intersil
rfd8p06le-sm rfp8p06le.pdf
RFD8P06LE, RFD8P06LESM, RFP8P06LEData Sheet July 1999 File Number 4273.18A, 60V, 0.300 Ohm, ESD Rated, Logic FeaturesLevel, P-Channel Power MOSFET 8A, 60VThese products are P-Channel power MOSFETs rDS(ON) = 0.300manufactured using the MegaFET process. This process, 2kV ESD Protectedwhich uses feature sizes approaching those of LSI circuits,gives optimum utilizati
7.1. Size:134K fairchild semi
rfd8p06e-sm rfp8p06e.pdf
RFD8P06E, RFD8P06ESM, RFP8P06EData Sheet January 20028A, 60V, 0.300 Ohm, P-Channel Power FeaturesMOSFETs 8A, 60VThese are P-Channel power MOSFETs manufactured using rDS(ON) = 0.300the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits gives optimum utilization of silicon, r
8.2. Size:57K intersil
rfd8p05-sm rfp8p05.pdf
RFD8P05, RFD8P05SM, RFP8P05Data Sheet July 1999 File Number 2384.28A, 50V, 0.300 Ohm, P-Channel Power FeaturesMOSFETs 8A, 50VThese products are P-Channel power MOSFETs rDS(ON) = 0.300manufactured using the MegaFET process. This process, UIS SOA Rating Curvewhich uses feature sizes approaching those of LSI circuits,gives optimum utilization of silicon, resulting i
Datasheet: RFP50N06LE
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