STP10NB20FP MOSFET. Datasheet pdf. Equivalent
Type Designator: STP10NB20FP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 135 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220FP
STP10NB20FP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP10NB20FP Datasheet (PDF)
stp10nb20.pdf
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stp10nk70z.pdf
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stp10nk80z.pdf
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stp10nk70zfp stp10nk70z.pdf
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std10nm60n stf10nm60n sti10nm60n stp10nm60n stu10nm60n.pdf
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std10nm65n stf10nm65n stp10nm65n stu10nm65n.pdf
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stp10na40.pdf
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stp10nk50z.pdf
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stp10nk50z stf10nk50z.pdf
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stp10nk70z stp10nk70zfp.pdf
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stp10nk60z.pdf
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stp10n80k5.pdf
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stp10nk60zfp.pdf
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stp10nm65n.pdf
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stp10nk70zfp.pdf
isc N-Channel MOSFET Transistor STP10NK70ZFPFEATURESDrain Current : I = 8.6A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)@V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
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