ELM34603AA MOSFET Datasheet: NP-Ch, 30V, 7A. Full specification with pinout and replacement list

ELM34603AA Specs and Replacement

   Type Designator: ELM34603AA
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0275 Ohm
   Package: SOP-8

ELM34603AA substitution

- MOSFET ⓘ Cross-Reference Search

ELM34603AA datasheet

..1. Size:981K elm
elm34603aa.pdf pdf_icon

Complementary MOSFET ELM34603AA-N General Description Features ELM34603AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=7A Id=-6A Rds(on) ... See More ⇒

7.1. Size:1322K elm
elm34605aa-n.pdf pdf_icon

Complementary MOSFET ELM34605AA-N General Description Features ELM34605AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=7A Id=-6A Rds(on) ... See More ⇒

7.2. Size:931K elm
elm34601aa.pdf pdf_icon

Complementary MOSFET ELM34601AA-N General Description Features ELM34601AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=7A Id=-6A Rds(on) ... See More ⇒

7.3. Size:973K elm
elm34604aa.pdf pdf_icon

Complementary MOSFET ELM34604AA-N General Description Features ELM34604AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=40V Vds=-40V and low gate charge. Id=7A Id=-5A Rds(on) ... See More ⇒