ELM34808AA MOSFET Datasheet: N-Ch, 30V, 7A. Full specification with pinout and replacement list

ELM34808AA Specs and Replacement

Type Designator: ELM34808AA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOP-8

ELM34808AA substitution

- MOSFET ⓘ Cross-Reference Search

ELM34808AA datasheet

..1. Size:559K elm
elm34808aa.pdf pdf_icon

Dual N-channel MOSFET ELM34808AA-N General description Features ELM34808AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=7A resistance. Rds(on) ... See More ⇒

7.1. Size:1071K elm
elm34803aa-n.pdf pdf_icon

Dual P-channel MOSFET ELM34803AA-N General description Features ELM34803AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on) ... See More ⇒

7.2. Size:775K elm
elm34802aa-n.pdf pdf_icon

Dual N-channel MOSFET ELM34802AA-N General description Features ELM34802AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=4.5A resistance. Rds(on) ... See More ⇒

7.3. Size:416K elm
elm34801aa.pdf pdf_icon

Dual P-channel MOSFET ELM34801AA-N General description Features ELM34801AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-6A resistance. Rds(on) ... See More ⇒