All MOSFET. ELM34810AA Datasheet

 

ELM34810AA Datasheet and Replacement


   Type Designator: ELM34810AA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 365 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: SOP-8
 

 ELM34810AA substitution

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ELM34810AA Datasheet (PDF)

 ..1. Size:545K  elm
 elm34810aa.pdf pdf_icon

ELM34810AA

Dual N-channel MOSFETELM34810AA-NGeneral description Features ELM34810AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=7A resistance. Rds(on)

 7.1. Size:429K  elm
 elm34812aa.pdf pdf_icon

ELM34810AA

Dual N-channel MOSFETELM34812AA-NGeneral description Features ELM34812AA-N uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=7A resistance. Rds(on)

 8.1. Size:1071K  elm
 elm34803aa-n.pdf pdf_icon

ELM34810AA

Dual P-channel MOSFETELM34803AA-NGeneral description Features ELM34803AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

 8.2. Size:775K  elm
 elm34802aa-n.pdf pdf_icon

ELM34810AA

Dual N-channel MOSFETELM34802AA-NGeneral description Features ELM34802AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=4.5A resistance. Rds(on)

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Datasheet: ELM34604AA , ELM34605AA-N , ELM34608AA , ELM34801AA , ELM34802AA-N , ELM34803AA-N , ELM34804AA , ELM34808AA , IRFZ48N , ELM34812AA , ELM35601KA , ELM35603KA , ELM35604KA , ELM36400EA , ELM36402EA , ELM36403EA , ELM36405EA .

History: AOD448 | IRF7307QPBF | AP6907GH-HF | IPA50R350CP

Keywords - ELM34810AA MOSFET datasheet

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