All MOSFET. ELM36400EA Datasheet

 

ELM36400EA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ELM36400EA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SOT-26

 ELM36400EA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ELM36400EA Datasheet (PDF)

 ..1. Size:634K  elm
 elm36400ea.pdf

ELM36400EA ELM36400EA

Single N-channel MOSFETELM36400EA-SGeneral description Features ELM36400EA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=7A resistance. Rds(on)

 7.1. Size:587K  elm
 elm36403ea.pdf

ELM36400EA ELM36400EA

Single P-channel MOSFETELM36403EA-SGeneral description Features ELM36403EA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-5A resistance. Rds(on)

 7.2. Size:485K  elm
 elm36402ea.pdf

ELM36400EA ELM36400EA

Single N-channel MOSFETELM36402EA-SGeneral description Features ELM36402EA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=6.5A resistance. Rds(on)

 7.3. Size:481K  elm
 elm36405ea.pdf

ELM36400EA ELM36400EA

Single P-channel MOSFETELM36405EA-SGeneral description Features ELM36405EA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-5A resistance. Rds(on)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AOTF20S60

 

 
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