All MOSFET. RLP1N06CLE Datasheet

 

RLP1N06CLE Datasheet and Replacement


   Type Designator: RLP1N06CLE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5.5 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220AB
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RLP1N06CLE Datasheet (PDF)

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RLP1N06CLE

RLP1N06CLEData Sheet July 1999 File Number 2839.41A, 55V, 0.750 Ohm,Voltage Clamping, FeaturesCurrent Limited, N-Channel Power 1A, 55VMOSFET rDS(ON) = 0.750The RLP1N06CLE is an intelligent monolithic power circuit ILIMIT at 150oC = 1.1A to 1.5A Maximumwhich incorporates a lateral bipolar transistor, resistors,zener diodes, and a PowerMOS transistor. The current

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History: WMM11N80M3 | RFP2N10L | IRFI7536G | AM2314NE | FDMS9620S

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