RLP1N06CLE Specs and Replacement
Type Designator: RLP1N06CLE
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5.5 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO220AB
RLP1N06CLE substitution
- MOSFET ⓘ Cross-Reference Search
RLP1N06CLE datasheet
rlp1n06cle.pdf
RLP1N06CLE Data Sheet July 1999 File Number 2839.4 1A, 55V, 0.750 Ohm,Voltage Clamping, Features Current Limited, N-Channel Power 1A, 55V MOSFET rDS(ON) = 0.750 The RLP1N06CLE is an intelligent monolithic power circuit ILIMIT at 150oC = 1.1A to 1.5A Maximum which incorporates a lateral bipolar transistor, resistors, zener diodes, and a PowerMOS transistor. The current ... See More ⇒
Detailed specifications: RFP8P05, RFP8P06E, RFP8P06LE, RFP8P10, RFT1P06E, RFT2P03L, RFT3055LE, RFW2N06RLE, AON7403, SD10425JAA, SDF034JAA-D, SDF034JAA-S, SDF034JAA-U, SDF034JAB-D, SDF034JAB-S, SDF034JAB-U, SDF044JAA-D
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