ELM36800EA MOSFET Datasheet: N-Ch, 30V, 3.5A. Full specification with pinout and replacement list

ELM36800EA Specs and Replacement

Type Designator: ELM36800EA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm

Package: SOT-26

ELM36800EA substitution

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ELM36800EA datasheet

..1. Size:425K elm
elm36800ea.pdf pdf_icon

Dual N-channel MOSFET ELM36800EA-S General description Features ELM36800EA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=3.5A resistance. Rds(on) ... See More ⇒

9.1. Size:587K elm
elm36403ea.pdf pdf_icon

Single P-channel MOSFET ELM36403EA-S General description Features ELM36403EA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-5A resistance. Rds(on) ... See More ⇒

9.2. Size:485K elm
elm36402ea.pdf pdf_icon

Single N-channel MOSFET ELM36402EA-S General description Features ELM36402EA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=6.5A resistance. Rds(on) ... See More ⇒

9.3. Size:634K elm
elm36400ea.pdf pdf_icon

Single N-channel MOSFET ELM36400EA-S General description Features ELM36400EA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=7A resistance. Rds(on) ... See More ⇒