All MOSFET. ELM36800EA Datasheet

 

ELM36800EA Datasheet and Replacement


   Type Designator: ELM36800EA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: SOT-26
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ELM36800EA Datasheet (PDF)

 ..1. Size:425K  elm
 elm36800ea.pdf pdf_icon

ELM36800EA

Dual N-channel MOSFETELM36800EA-SGeneral description Features ELM36800EA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=3.5A resistance. Rds(on)

 9.1. Size:587K  elm
 elm36403ea.pdf pdf_icon

ELM36800EA

Single P-channel MOSFETELM36403EA-SGeneral description Features ELM36403EA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-5A resistance. Rds(on)

 9.2. Size:485K  elm
 elm36402ea.pdf pdf_icon

ELM36800EA

Single N-channel MOSFETELM36402EA-SGeneral description Features ELM36402EA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=6.5A resistance. Rds(on)

 9.3. Size:634K  elm
 elm36400ea.pdf pdf_icon

ELM36800EA

Single N-channel MOSFETELM36400EA-SGeneral description Features ELM36400EA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=7A resistance. Rds(on)

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History: TK2P60D | IRFBG20

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