ELM3C1260A Datasheet and Replacement
Type Designator: ELM3C1260A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 281 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO-220F
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ELM3C1260A Datasheet (PDF)
elm3c1260a.pdf

Single N-channel MOSFETELM3C1260AGeneral description Features ELM3C1260A uses advanced trench technology to Vds=600Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)
elm3c1350a.pdf

Single N-channel MOSFETELM3C1350AGeneral description Features ELM3C1350A uses advanced trench technology to Vds=500Vprovide excellent Rds(on), low gate charge and low gate Id=13A resistance. Rds(on)
elm3c0850a.pdf

Single N-channel MOSFETELM3C0850AGeneral description Features ELM3C0850A uses advanced trench technology to Vds=500Vprovide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SM2A12NSU | BRCS200P03DP | SM2F04NSU | H5N2512FL-M0 | FTK1090 | TSM4424CS | LKK47-06C5
Keywords - ELM3C1260A MOSFET datasheet
ELM3C1260A cross reference
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History: SM2A12NSU | BRCS200P03DP | SM2F04NSU | H5N2512FL-M0 | FTK1090 | TSM4424CS | LKK47-06C5



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