All MOSFET. ELM3C1260A Datasheet

 

ELM3C1260A MOSFET. Datasheet pdf. Equivalent


   Type Designator: ELM3C1260A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 46.5 nC
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 281 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO-220F

 ELM3C1260A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ELM3C1260A Datasheet (PDF)

 ..1. Size:576K  elm
 elm3c1260a.pdf

ELM3C1260A ELM3C1260A

Single N-channel MOSFETELM3C1260AGeneral description Features ELM3C1260A uses advanced trench technology to Vds=600Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)

 8.1. Size:461K  elm
 elm3c1350a.pdf

ELM3C1260A ELM3C1260A

Single N-channel MOSFETELM3C1350AGeneral description Features ELM3C1350A uses advanced trench technology to Vds=500Vprovide excellent Rds(on), low gate charge and low gate Id=13A resistance. Rds(on)

 9.1. Size:1038K  china
 elm3c0660a.pdf

ELM3C1260A ELM3C1260A

N MOSFETELM3C0660A ELM3C0660A N Vds=600V MOSFET Id=6A Rds(on)

 9.2. Size:461K  elm
 elm3c0850a.pdf

ELM3C1260A ELM3C1260A

Single N-channel MOSFETELM3C0850AGeneral description Features ELM3C0850A uses advanced trench technology to Vds=500Vprovide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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