ELM51401FA Datasheet and Replacement
Type Designator: ELM51401FA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 20 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: SC-70
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ELM51401FA Datasheet (PDF)
elm51401fa.pdf

Single P-channel MOSFETELM51401FA-SGeneral description Features ELM51401FA-S uses advanced trench technology Vds=-20Vto provide excellent Rds(on), low gate charge and Id=-1.0Aoperation with gate voltages as low as 1.8V. Rds(on) = 600m (Vgs=-4.5V) Rds(on) = 800m (Vgs=-2.5V) Rds(on) = 1300m (Vgs=-1.8V)Maximum absolute ratingsParameter Symbol Limi
elm51400fa-s.pdf

Single N-channel MOSFETELM51400FA-SGeneral description Features ELM51400FA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=1.0A resistance. Rds(on)
elm51404fa.pdf

Single N-channel MOSFETELM51404FA-SGeneral description Features ELM51404FA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=3.6A resistance. Rds(on) = 82m (Vgs=10V) Rds(on) = 90m (Vgs=4.5V) Rds(on) = 102m (Vgs=2.5V)Maximum absolute ratingsParameter Symbol Limit UnitDrain-source voltage Vds
elm51402fa.pdf

Single N-channel MOSFETELM51402FA-SGeneral description Features ELM51402FA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=1.0A resistance. Rds(on)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDMS9620S | IRFI7536G | WMM11N80M3 | HGS120N10SL
Keywords - ELM51401FA MOSFET datasheet
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History: FDMS9620S | IRFI7536G | WMM11N80M3 | HGS120N10SL



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