ELM544539A MOSFET Datasheet: NP-Ch, 30V, 5.4A. Full specification with pinout and replacement list

ELM544539A Specs and Replacement

Type Designator: ELM544539A

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: SOP-8

ELM544539A substitution

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ELM544539A datasheet

..1. Size:1738K elm
elm544539a.pdf pdf_icon

Complementary MOSFET ELM544539A-N General Description Features ELM544539A-N uses advanced trench technology N-channel to provide excellent Rds(on) and low gate charge. Vds=30V, Id=5.0A, Rds(on)=36m (Vgs=10V) Vds=30V, Id=4.7A, Rds(on)=46m (Vgs=4.5V) P-channel Vds=-30V, Id=-5.4A, Rds(on)=62m (Vgs=-10V) Vds=-30V, Id=-4.2A, Rds(on)=90m (Vgs=-4.5V) Maximum Absol... See More ⇒

7.1. Size:2807K elm
elm544599a.pdf pdf_icon

Complementary MOSFET ELM544599A-N General Description Features ELM544599A-N uses advanced trench technology N-channel to provide excellent Rds(on) and low gate charge. Vds=40V, Id=8.0A, Rds(on)=22m (Vgs=10V) Vds=40V, Id=6.0A, Rds(on)=28m (Vgs=4.5V) P-channel Vds=-40V, Id=-7.2A, Rds(on)=42m (Vgs=-10V) Vds=-40V, Id=-6.2A, Rds(on)=60m (Vgs=-4.5V) Maximum Abso... See More ⇒

8.1. Size:1276K elm
elm544634a.pdf pdf_icon

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9.1. Size:1172K elm
elm549407a.pdf pdf_icon

Single P-channel MOSFET ELM549407A-N General description Features ELM549407A-N uses advanced trench technology to Vds=-60V provide excellent Rds(on), low gate charge and low gate Id=-4.6A resistance. Rds(on) ... See More ⇒