ELM58822SA Specs and Replacement
Type Designator: ELM58822SA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TSSOP-8
ELM58822SA substitution
- MOSFET ⓘ Cross-Reference Search
ELM58822SA datasheet
elm58822sa.pdf
(common drain) Dual N-channel MOSFET ELM58822SA-S General description Features ELM58822SA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=6.5A resistance. Rds(on) = 32m (Vgs=4.5V) Rds(on) = 35m (Vgs=2.5V) Maximum absolute ratings Parameter Symbol Limit Unit Drain-source voltage Vds 20 V Gate-sourc... See More ⇒
elm588822a-s.pdf
(common drain) Dual N-channel MOSFET ELM588822A-S General description Features ELM588822A-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=7.2A resistance. Rds(on) = 28m (Vgs=4.5V) Rds(on) = 32m (Vgs=2.5V) Rds(on) = 45m (Vgs=1.8V) Maximum absolute ratings Ta=25 C. Unless otherwise noted. Par... See More ⇒
Detailed specifications: ELM544599A, ELM544634A, ELM54801AA, ELM549407A, ELM56800EA, ELM56801EA, ELM57800GA, ELM57801GA, IRF3710, ELM588822A-S, ELM5B801QA, ELM5E400PA, ELM5E401PA, ELM5E402PA, ELM5H1072A, ELM5J400RA, ELM5K8471A
Keywords - ELM58822SA MOSFET specs
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History: SML40M42BFN | SE4060
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