All MOSFET. ELM58822SA Datasheet

 

ELM58822SA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ELM58822SA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 650 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TSSOP-8

 ELM58822SA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ELM58822SA Datasheet (PDF)

 ..1. Size:1270K  elm
 elm58822sa.pdf

ELM58822SA ELM58822SA

(common drain)Dual N-channel MOSFET ELM58822SA-SGeneral description Features ELM58822SA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=6.5A resistance. Rds(on) = 32m (Vgs=4.5V) Rds(on) = 35m (Vgs=2.5V)Maximum absolute ratingsParameter Symbol Limit UnitDrain-source voltage Vds 20 VGate-sourc

 8.1. Size:1801K  elm
 elm588822a-s.pdf

ELM58822SA ELM58822SA

(common drain)Dual N-channel MOSFET ELM588822A-SGeneral description Features ELM588822A-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=7.2A resistance. Rds(on) = 28m (Vgs=4.5V) Rds(on) = 32m (Vgs=2.5V) Rds(on) = 45m (Vgs=1.8V)Maximum absolute ratingsTa=25C. Unless otherwise noted.Par

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: AP2761I-H | AOT20N60L | FQP85N06 | MTM23223 | IPP60R380P6 | BRB80N08

 

 
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