All MOSFET. ES6U3 Datasheet

 

ES6U3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ES6U3
   Marking Code: U03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 1.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.4 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: WEMT6

 ES6U3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ES6U3 Datasheet (PDF)

 ..1. Size:143K  rohm
 es6u3.pdf

ES6U3 ES6U3

4V Drive Nch+SBD MOSFET ES6U3 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / WEMT6Schottky barrier diode (6) (5) (4) Features 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. (1) (2) (3)2) High-speed switching, Low On-resistance. 3) Built-in Low VF schottky barrier diode. Abbriviated symbol : U03 Applications Inner circuit Switchin

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