ES6U3 Datasheet and Replacement
Type Designator: ES6U3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 15 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: WEMT6
ES6U3 substitution
ES6U3 Datasheet (PDF)
es6u3.pdf

4V Drive Nch+SBD MOSFET ES6U3 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / WEMT6Schottky barrier diode (6) (5) (4) Features 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. (1) (2) (3)2) High-speed switching, Low On-resistance. 3) Built-in Low VF schottky barrier diode. Abbriviated symbol : U03 Applications Inner circuit Switchin
Datasheet: EM6K33 , EM6K34 , EM6K6 , EM6K7 , EMH2314 , EMH2417R , EMH2418R , ES6U2 , 4435 , ES6U41 , ES6U42 , F10F50VX2 , F10V50VX2 , F10W50 , F10W50C , F10W90HVX2 , F11F60C3M .
History: TPHR9003NL | SM6127NSK | SI12N60 | BSS159N | RU40S4H | 2SK3985-01
Keywords - ES6U3 MOSFET datasheet
ES6U3 cross reference
ES6U3 equivalent finder
ES6U3 lookup
ES6U3 substitution
ES6U3 replacement
History: TPHR9003NL | SM6127NSK | SI12N60 | BSS159N | RU40S4H | 2SK3985-01



LIST
Last Update
MOSFET: AP20G03GD | AP200N15TLG1 | AP200N15MP | AP200N10MP | AP200N04TLG5 | AP200N04NF | AP1N10I | AP18P20P | AP18N03D | AP180N10MP | AP180N04NF | AP180N03D | AP16P02S | AP16P01BF | AP15P10D | AP15P06DF
Popular searches
mpsa65 | 2sa794 | 2sa816 | 2sc897 datasheet | 2sd389 | mp41 transistor | nkt275 datasheet | 2sd947