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ES6U3 Specs and Replacement

Type Designator: ES6U3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 15 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: WEMT6

ES6U3 substitution

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ES6U3 datasheet

 ..1. Size:143K  rohm
 es6u3.pdf pdf_icon

ES6U3

4V Drive Nch+SBD MOSFET ES6U3 Structure Dimensions (Unit mm) Silicon N-channel MOSFET / WEMT6 Schottky barrier diode (6) (5) (4) Features 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. (1) (2) (3) 2) High-speed switching, Low On-resistance. 3) Built-in Low VF schottky barrier diode. Abbriviated symbol U03 Applications Inner circuit Switchin... See More ⇒

Detailed specifications: EM6K33, EM6K34, EM6K6, EM6K7, EMH2314, EMH2417R, EMH2418R, ES6U2, IRFP260, ES6U41, ES6U42, F10F50VX2, F10V50VX2, F10W50, F10W50C, F10W90HVX2, F11F60C3M

Keywords - ES6U3 MOSFET specs

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