F10F50VX2 Specs and Replacement
Type Designator: F10F50VX2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220F
F10F50VX2 substitution
- MOSFET ⓘ Cross-Reference Search
F10F50VX2 datasheet
2sk2188 f10f50vx2.pdf
SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2188 Case E-pack Case FTO-220 (Unit mm) (F10F50VX2) 500V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input Hi... See More ⇒
Detailed specifications: EM6K7, EMH2314, EMH2417R, EMH2418R, ES6U2, ES6U3, ES6U41, ES6U42, SKD502T, F10V50VX2, F10W50, F10W50C, F10W90HVX2, F11F60C3M, F11F60CPM, F11F80C3M, F11S80C3
Keywords - F10F50VX2 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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