All MOSFET. F10V50VX2 Datasheet

 

F10V50VX2 Datasheet and Replacement


   Type Designator: F10V50VX2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220
 

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F10V50VX2 Datasheet (PDF)

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F10V50VX2

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2186Case : E-packCase : TO-220(Unit : mm)(F10V50VX2)500V 10AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input Hig

Datasheet: EMH2314 , EMH2417R , EMH2418R , ES6U2 , ES6U3 , ES6U41 , ES6U42 , F10F50VX2 , IRFB3607 , F10W50 , F10W50C , F10W90HVX2 , F11F60C3M , F11F60CPM , F11F80C3M , F11S80C3 , F12F50VX2 .

History: NVMFD020N06C | AFP8452 | IPD90N04S3-H4

Keywords - F10V50VX2 MOSFET datasheet

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