F10W50 Specs and Replacement
Type Designator: F10W50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO-3P
F10W50 substitution
- MOSFET ⓘ Cross-Reference Search
F10W50 datasheet
Detailed specifications: EMH2417R, EMH2418R, ES6U2, ES6U3, ES6U41, ES6U42, F10F50VX2, F10V50VX2, 13N50, F10W50C, F10W90HVX2, F11F60C3M, F11F60CPM, F11F80C3M, F11S80C3, F12F50VX2, F12W50VX2
Keywords - F10W50 MOSFET specs
F10W50 cross reference
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F10W50 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IPD033N06N
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