All MOSFET. F10W90HVX2 Datasheet

 

F10W90HVX2 Datasheet and Replacement


   Type Designator: F10W90HVX2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-3P
 

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F10W90HVX2 Datasheet (PDF)

 ..1. Size:272K  shindengen
 2sk2676 f10w90hvx2.pdf pdf_icon

F10W90HVX2

SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2676Case : MTO-3P(Unit : mm)( F10W90HVX2 )900V 10AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.Avalanche resistance guaranteed.APPLICATIONSwitching power supply of

Datasheet: ES6U2 , ES6U3 , ES6U41 , ES6U42 , F10F50VX2 , F10V50VX2 , F10W50 , F10W50C , 4N60 , F11F60C3M , F11F60CPM , F11F80C3M , F11S80C3 , F12F50VX2 , F12W50VX2 , F15F60C3M , F15W50VX2 .

History: RQ3E100BN | AOB296L | IRH7250 | VBM1101N | WFW20N60W | AP3700YT | IRF3704PBF

Keywords - F10W90HVX2 MOSFET datasheet

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