F10W90HVX2 Specs and Replacement
Type Designator: F10W90HVX2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 210 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-3P
F10W90HVX2 substitution
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F10W90HVX2 datasheet
2sk2676 f10w90hvx2.pdf
SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2676 Case MTO-3P (Unit mm) ( F10W90HVX2 ) 900V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of ... See More ⇒
Detailed specifications: ES6U2, ES6U3, ES6U41, ES6U42, F10F50VX2, F10V50VX2, F10W50, F10W50C, 12N60, F11F60C3M, F11F60CPM, F11F80C3M, F11S80C3, F12F50VX2, F12W50VX2, F15F60C3M, F15W50VX2
Keywords - F10W90HVX2 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IPD038N06N3 | SMG3401 | LSGN04R025 | IRFI520G
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