F20F60C3M MOSFET. Datasheet pdf. Equivalent

   Type Designator: F20F60C3M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 87 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 780 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-220F

F20F60C3M Transistor Equivalent Substitute - MOSFET Cross-Reference Search