F20F60C3M Specs and Replacement
Type Designator: F20F60C3M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 780 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO-220F
F20F60C3M substitution
- MOSFET ⓘ Cross-Reference Search
F20F60C3M datasheet
f20f60c3m.pdf
P we MOS E o r F T O T IE U LN Untmm i P cae T 20 akg F O-2A F 0 6C M 2F 0 3 6 0 0 0 V2A 0000 20F60C3M F aue etr L wR o ON FsS t at wihn cig Ioae akg s... See More ⇒
Detailed specifications: F11F60CPM, F11F80C3M, F11S80C3, F12F50VX2, F12W50VX2, F15F60C3M, F15W50VX2, F16F60CPM, IRFP450, F20S60C3, F20W50VX2, F20W60C3, F21F60CPM, F24W60C3, F25F60CPM, F31W60CP, F35W60C3
Keywords - F20F60C3M MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AP6N3R8H
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